Effect of atomic-layer-deposition sequence on the composition of indium-zinc-tin oxide thin films and its effect on thin-film transistor characteristics

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films Pub Date : 2025-06-07 DOI:10.1016/j.tsf.2025.140714

Yurim Jeong, Chang-Yun Na, Sung Min Cho

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引用次数: 0

Abstract

Indium-zinc-tin oxide (IZTO) thin films were deposited via atomic layer deposition (ALD) using In and Sn precursors that have not been reported yet. The temperature ranges in which ALD of In₂O₃, ZnO, and SnO₂ thin films was possible were determined, and the IZTO thin films were deposited at 170°C, which all ranges overlap. The In₂O₃, ZnO, and SnO₂ thin films deposited by ALD showed a composition that was almost stoichiometric. The effect of the deposition order of three metal oxides on the composition of IZTO was investigated. It was found that the deposition of ZnO was inhibited when ZnO ALD was performed immediately after SnO₂ ALD. Therefore, the preferred ALD sequence for IZTO thin films is SnO₂, In₂O₃, and ZnO. In one supercycle for IZTO ALD, the number of subcycles of In₂O₃ was fixed to 1 and the number of subcycles of ZnO and SnO₂ was varied, and the changes in the electrical properties of IZTO were observed. Two IZTO compositions exhibiting distinctly different electrical characteristics were selected and applied to the upper and lower channels of a dual-channel IZTO thin-film transistor (TFT). By controlling the position and thickness of two IZTO channel layers with different characteristics, it was shown that a TFT with constructively combined characteristics is possible by collecting only the excellent electrical characteristics of each IZTO channel layer.

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原子层-沉积顺序对氧化铟锌锡薄膜组成的影响及其对薄膜晶体管特性的影响

以铟和锡为前驱体，采用原子层沉积（ALD）法制备了铟锌锡氧化物（IZTO）薄膜。确定了In2O3、ZnO和SnO2薄膜的ALD温度范围，并在170℃下沉积了IZTO薄膜，各温度范围重叠。ALD沉积的In2O3、ZnO和SnO2薄膜的组成几乎是化学计量的。研究了三种金属氧化物的沉积顺序对镀层组成的影响。结果表明，在SnO2 ALD后立即进行ZnO ALD可以抑制ZnO的沉积。因此，zto薄膜优选的ALD顺序是SnO2、In2O3和ZnO。在一个IZTO ALD超循环中，将In2O3的亚循环数固定为1，改变ZnO和SnO2的亚循环数，观察IZTO的电学性能变化。选择两种具有明显不同电特性的IZTO组合物，并将其应用于双通道IZTO薄膜晶体管（TFT）的上、下通道。通过控制两个具有不同特性的IZTO通道层的位置和厚度，表明只收集每个IZTO通道层的优异电特性就可以得到具有建设性组合特性的TFT。

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来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.