Optimization and application of doped erbium silicate films by regulating annealing and film deposition processes

Abstract

By regulating the deposition and crystallization processes of doped erbium silicate thin films prepared by magnetron sputtering, the near-infrared and up-conversion luminescence (UCL) properties have been significantly improved. Studies demonstrate that higher annealing temperatures and longer annealing times effectively improve the crystallinity and luminescence performance of erbium-doped silicate films with varying compositions. Employing oxygen as the annealing atmosphere further reduces oxygen vacancy defects in the films, enhancing the optical activity of erbium ions. For the sputtering process, optimizing the substrate temperature and chamber atmosphere significantly increases the migration rate of sputtered particles on the substrate, thereby promoting film crystallization performance. Additionally, modifying the sputtering and annealing conditions influences the phonon energy changes related to defect concentration, enabling tunable green/red emission ratios in UCL. Through combined annealing and sputtering process optimization, doped erbium silicate films exhibit substantial improvements in both luminescence intensity and lifetime. The optimized preparation process not only provides valuable insights for enhancing the performance of other erbium compound films but also demonstrates broad application potential in high-performance erbium-ion emitting devices. Owing to the high luminescence efficiency, long lifetime, low cost, and simple silicon-compatible fabrication process, optimized erbium-doped silicate films are promising candidates for gain materials in silicon-based efficient lasers and optical amplifiers, offering a novel solution for integrated optical devices.