Surface plasmon-polariton study of photoinduced diffusion in light-sensitive Ag–As2S3 thin-film structure

IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS
I.Z. Indutnyi, V.I. Mynko, M.V. Sopinskyy, S.V. Mamykin
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Abstract

This study explores photostimulated silver diffusion in an "Ag grating–As₂S₃ layer" structure using the surface plasmon-polariton (SPP) resonance method. The process was examined under illumination with light of various wavelengths (405, 532, and 632.8 nm). A silver diffraction grating with a 515 nm period and 20 nm relief depth, optimal for SPP excitation, served as the substrate. The kinetics of structural changes were monitored via the shape and angular shift of the SPP resonance in the specular reflection of p-polarized low-intensity He-Ne laser radiation. Differences in the optical properties of photodoped As₂S₃ layers exposed to light from spectral regions corresponding to interband transitions, as well as to transitions involving localized states within the As₂S₃ band gap, were revealed. These differences are shown to be associated with the specific mechanisms of photodoping under different exposure conditions. Irradiation with short-wavelength light (405 nm) results in intense generation of electron-hole pairs, formation of Ag–S bonds, and Ag₂S clusters, significantly increasing both the refractive index and the extinction coefficient of the chalcogenide layer. This leads to a substantial change in the angular position of the SPP resonance, with a relatively small change in its depth. In contrast, exposure to longer-wavelength radiation leads to photodoping primarily driven by internal photoemission of electrons, resulting in increased interface roughness and a significant decrease in plasmon resonance depth with only a small shift in its position.
光敏Ag-As2S3薄膜结构中光致扩散的表面等离子体-极化子研究
本研究利用表面等离子体-极化子(SPP)共振方法探索了“Ag光栅- as₂S₃层”结构中光刺激银的扩散。在不同波长的光(405、532和632.8 nm)照射下检测该过程。作为衬底的银衍射光栅周期为515 nm,救济深度为20 nm,最适合SPP激发。通过p偏振低强度He-Ne激光辐射镜面反射中SPP共振的形状和角位移来监测结构变化的动力学。揭示了暴露在对应于带间跃迁的光谱区域的光下的光掺杂As₂S₃层的光学性质的差异,以及涉及As₂S₃带隙内局域态的跃迁。这些差异被证明与不同曝光条件下光掺杂的特定机制有关。短波长光(405 nm)的照射使硫族化物层的折射率和消光系数显著增加,电子-空穴对产生强烈,Ag - S键形成,Ag₂S团簇形成。这导致SPP共振的角位置发生实质性变化,而其深度变化相对较小。相比之下,暴露于较长波长的辐射下导致的光掺杂主要是由电子的内部光电发射驱动的,导致界面粗糙度增加,等离子体共振深度显著降低,其位置仅发生微小移动。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Thin Solid Films
Thin Solid Films 工程技术-材料科学:膜
CiteScore
4.00
自引率
4.80%
发文量
381
审稿时长
7.5 months
期刊介绍: Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.
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