原位结晶对用于透明电极的溅射硅掺杂氧化铟薄膜性能的影响

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films Pub Date : 2025-08-16 DOI:10.1016/j.tsf.2025.140771

K. Jenifer , D. Catherine Jesinthamary , Riza Paul , S. Arulkumar , S. Parthiban , G. Balaji

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引用次数: 0

摘要

采用射频磁控溅射技术，在原位加热的玻璃衬底上以低溅射功率沉积了高透明、高导电性的掺硅氧化铟薄膜。研究了衬底温度对SIO薄膜结构、光学、电学和形貌的影响。研究表明，即使在低溅射功率和低溅射厚度的情况下，衬底加热也能显著提高光电性能。优化后的SIO薄膜具有良好的可见光透过率（> 79%），低片层电阻（~ 12 Ω/⬜）和高FOM （~ 8 × 10-3 /Ω）。结果突出了SIO薄膜在各种光电应用中作为透明电极的潜力。

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Influence of in-situ crystallization on the properties of sputtered silicon doped indium oxide thin-films for transparent electrode applications

Highly transparent and conducting, silicon doped indium oxide (SIO) thin-films were deposited at low sputtering power on in-situ heated glass substrates using radio frequency magnetron sputtering. The influence of substrate temperature on structural, optical, electrical and morphological properties of the SIO thin films were investigated. The study revealed that substrate heating significantly enhance the optoelectrical properties even under conditions of low sputtering power and thickness. The optimized SIO film exhibited good visible light transmittance (> 79 %), low sheet resistance (∼12 Ω/⬜) and high FOM (∼ 8 × 10^–3/Ω). The results highlight the potential of SIO thin films as transparent electrodes in various optoelectronic applications.

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来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.