基于自旋镀膜技术的Al/TiO2/氧化石墨烯/氧化铟锡互补忆阻器

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films Pub Date : 2025-08-19 DOI:10.1016/j.tsf.2025.140774

Jinyan Pan , Qiao Huang , Ruotong He , Tiejun Li , Hongyang He , Lingsen Yan , Zhenping Wang , Yan Liu , Jing Li , Yunlong Gao

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引用次数: 0

摘要

采用自旋镀膜技术在氧化铟锡（ITO）导电玻璃上制备TiO2和氧化石墨烯（GO）薄膜，研究了不同结构器件的电阻性能和机理。结果表明，所制备的器件可以在不同电压下进行SET/RESET，并具有独特的电阻变化特性。此外，我们发现在Al/TiO2/GO/ITO结构器件中存在互补电阻开关（CRS）行为，类似于Al/TiO2/ITO和Al/GO/ITO反向串联的忆阻器。它的电阻行为类似于神经元放电过程——去极化和极化行为。在恒电压调制下，电阻值逐渐升高（长期抑制，LTD），电阻值逐渐降低（长期增强，LTP）。该研究为CRS行为和可调电阻状态的协同组合在生物启发电子中实现神经元和突触功能的双路径方法的应用提供了参考，为基于互补忆阻器的仿生神经元提供了参考框架，拓宽了电阻性随机存取存储器的应用范围。

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Complementary memristor based on Al/TiO2/graphene oxide/indium tin oxides Resistive Random Access Memory by spin-coating techniques

The resistive properties and mechanisms of devices with different structures were investigated by fabricating TiO₂ and Graphene Oxide (GO) films on Indium Tin Oxides (ITO)conductive glass using spin-coating techniques. The results show that our prepared devices can undergo SET/RESET under different voltages and exhibit unique resistive change characteristics. In addition, we found a complementary resistive switching (CRS) behavior in the Al/TiO₂/GO/ITO structured devices, similar to the memristor which is reverse-series connection of Al/TiO₂/ITO and Al/GO/ITO. And its resistive behavior is analogous to neuronal firing processes-depolarizing and polarizing behavior. Furthermore, the resistance is modulated by constant voltage and the stimulus gets gradual resistance increase (long-term depression, LTD), and causes progressive resistance decrease (long-term potentiation, LTP). This study provides a reference for the application of the synergistic combination of CRS behavior and tunable resistance states enables a dual-path approach for implementing neuronal and synaptic functionalities in bio-inspired electronics, offering a reference framework for complementary memristor-based bionic neurons that broadens the application scope of Resistive Random Access Memory.

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来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.