Phase Control of Single-Crystalline Cobalt Oxide Thin Films Grown by Pulsed Laser Deposition

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films Pub Date : 2025-08-28 DOI:10.1016/j.tsf.2025.140776

Maximilian Mihm, Christian Holzmann, Johannes Seyd, Aladin Ullrich, Helmut Karl, Manfred Albrecht

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引用次数: 0

Abstract

Functional oxides are highly fascinating materials driving much research in chemistry, physics, and materials science. In this study, we have epitaxially grown CoO and Co

_{3}

_{4}

thin films on SrTiO

_{3}

(001) and MgO(001) substrates by pulsed laser deposition. By choosing the right deposition parameters such as substrate temperature and oxygen partial pressure, we are able to control the oxide phase and therefore the oxidation state of the transition metal controlling its physical properties. Structural analysis revealed a cube-on-cube orientation for both oxide phases with respect to the substrates and confirmed that all grown films are single-phase and single-crystalline. In addition, post-annealing in oxygen atmosphere allows to change the cobalt oxide phase from CoO to Co

_{3}

_{4}

. Furthermore, magnetic measurements indicated a Néel temperature of about

45

K for Co

_{3}

_{4}

thin films which is close to the reported bulk value.

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脉冲激光沉积单晶氧化钴薄膜的相位控制

功能氧化物是一种非常吸引人的材料，推动了化学、物理和材料科学的许多研究。在本研究中，我们利用脉冲激光沉积技术在SrTiO3（001）和MgO（001）衬底上外延生长了CoO和Co3O4薄膜。通过选择合适的沉积参数，如衬底温度和氧分压，我们能够控制氧化相，从而控制过渡金属的氧化状态，控制其物理性质。结构分析显示两种氧化相相对于衬底呈立方体对立方体取向，并证实所有生长的薄膜都是单相和单晶的。此外，在氧气氛中退火后，钴氧化物相由CoO变为Co3O4。此外，磁测量表明，Co3O4薄膜的nsamel温度约为45K，接近报道的体积值。

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来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.