International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.最新文献_第7页

Analysis of fluctuations in ultra-small semiconductor devices 超小型半导体器件的波动分析

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233646

P. Andrei, I. Mayergoyz

引用次数: 3

A novel technique for full-wave modeling of large-scale three-dimensional high-speed on/off-chip interconnect structures 一种大规模三维高速片上/片外互连结构全波建模新技术

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233632

D. Jiao, M. Mazumder, S. Chakravarty, C. Dai, M. Kobrinsky, M. Harmes, S. List

{"title":"A novel technique for full-wave modeling of large-scale three-dimensional high-speed on/off-chip interconnect structures","authors":"D. Jiao, M. Mazumder, S. Chakravarty, C. Dai, M. Kobrinsky, M. Harmes, S. List","doi":"10.1109/SISPAD.2003.1233632","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233632","url":null,"abstract":"This paper presents a novel, rigorous, and fast method for full-wave modeling of high-speed interconnect structures. In this method, the original wave propagation problem is represented into a generalized eigenvalue problem. The resulting eigenvalue representation can comprehend conductor and dielectric losses, arbitrary dielectric and conductor configurations, and arbitrary materials such as dispersive, and anisotropic media. The edge basis function is employed to accurately represent the unknown field, and the triangular element is adopted to flexibly model arbitrary geometry. A mode-matching technique applicable to lossy system is developed to solve large-scale 3D problems by using 2D-like CPU time and memory. A circuit-based extraction technique is developed to obtain S-parameters from the unknown fields. The proposed technique can generate S-parameters, full-wave RLGC, propagation constants, characteristic impedances, voltage, current, and field distributions, and hence yield a comprehensive representation of interconnect structures. Experimental and numerical results demonstrate its accuracy and efficiency.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122635538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 38

Grain boundary effects on subthreshold behaviour in single grain boundary nano-TFTs 晶界效应对单晶界纳米tft亚阈值行为的影响

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233673

P. Walker, H. Mizuta, S. Uno, Y. Furuta

引用次数: 2

Compact modeling of flash memory cells including substrate-bias-dependent hot-electron gate current 包括衬底偏置相关的热电子门电流的闪存单元的紧凑建模

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233675

K. Sonoda, M. Tanizawa, S. Shimizu, Y. Araki, S. Kawai, T. Ogura, S. Kobayashi, K. Ishikawa, Y. Inoui, N. Kotani

引用次数: 0

Characterization of Zener-tunneling drain leakage current in high-dose halo implants 高剂量光晕植入物中齐纳隧道漏电流的表征

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233655

Chang-hoon Choi, Shyh-Horng Yang, G. Pollack, S. Ekbote, P. Chidambaram, S. Johnson, C. Machala, R. Dutton

引用次数: 3

An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect 一种有效的含非准静态效应的短沟道MOSFET频域仿真方法

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233679

Kyu-Il Lee, Chanho Lee, Hyungsoon Shin, Y. Park, H. Min

引用次数: 1

Recent advances in sparse linear solver technology for semiconductor device simulation matrices 半导体器件仿真矩阵稀疏线性求解技术的最新进展

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233648

O. Schenk, M. Hagemann, S. Rollin

{"title":"Recent advances in sparse linear solver technology for semiconductor device simulation matrices","authors":"O. Schenk, M. Hagemann, S. Rollin","doi":"10.1109/SISPAD.2003.1233648","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233648","url":null,"abstract":"This paper discusses recent advances in the development of robust direct and iterative sparse linear solvers for general unsymmetric linear systems of equations. The primary focus is on robust methods for semiconductor device simulations matrices, but all methods presented are solely based on the structure of the matrices and can be applied to other application areas e.g. circuit simulation. Reliability, a low memory-footprint, and a short solution time are important demands for the linear solver. Currently, no black-box solver exists that can satisfy all criteria. The linear systems from semiconductor device simulations can be highly ill-conditioned and therefore quite challenging for direct and preconditioned iterative solver. In this paper, it is shown that nonsymmetric permutations and scalings aimed at placing large entries on the diagonal greatly enhance the reliability of direct and iterative methods. The numerical experiments indicate that the overall solution strategy is both reliable and very cost effective. The paper also compares the performance of some common software packages for solving general sparse systems.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"702 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126923279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 22

Mobility in UTB-SOI PFETS: local coordinate-based modeling with the density gradient method UTB-SOI pfet的迁移率:基于密度梯度法的局部坐标建模

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233635

D. Connelly, D. Grupp, P. Leon, D. Yergeau

引用次数: 0

CLIMATE (chip-level intertwined metal and active temperature estimator) CLIMATE(芯片级缠绕金属和主动温度估计器)

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233628

A. Labun, T. Reeve

引用次数: 3

Microstructure development and evolution 微观结构的发展与演变

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233627

M. Bloomfield, Y. Im, T. Cale

引用次数: 5