Mobility in UTB-SOI PFETS: local coordinate-based modeling with the density gradient method

D. Connelly, D. Grupp, P. Leon, D. Yergeau
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Abstract

Here, for the first time, a local coordinate-based method is used to model surface acoustic phonon and thickness variation scattering in Si/SiO/sub 2/ PMOS structures using the density-gradient method. A reduction in mobility below that predicted by the electric-field based "universal mobility" curves for ultra-thin-body SOI devices is predicted in excellent agreement with recently published experimental data. An extension to multiple dimensions, demonstrated with some simple examples, is then applied to cylindrical devices, showing the mobility reduction of two-dimensional confinement.
UTB-SOI pfet的迁移率:基于密度梯度法的局部坐标建模
本文首次采用基于局部坐标的方法,利用密度梯度法模拟了Si/SiO/sub - 2/ PMOS结构中表面声子和厚度变化散射。对于超薄体SOI器件,基于电场的“通用迁移率”曲线预测的迁移率降低与最近发表的实验数据非常吻合。用一些简单的例子证明了对多维的扩展,然后将其应用于圆柱形器件,显示了二维约束的迁移率降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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