高剂量光晕植入物中齐纳隧道漏电流的表征

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233655

Chang-hoon Choi, Shyh-Horng Yang, G. Pollack, S. Ekbote, P. Chidambaram, S. Johnson, C. Machala, R. Dutton

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引用次数: 3

摘要

基于改进的带到带隧道模型，研究了由于带到带隧道效应增强(即局部齐纳效应)而导致的mosfet结漏电流退化。为了抑制高剂量晕形种植体存在时严重的漏极漏电流，基于种植体诱导损伤(点缺陷)曲线估计了种植体条件对漏极漏电流的影响。

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Characterization of Zener-tunneling drain leakage current in high-dose halo implants

Degraded junction leakage current in scaled MOSFETs due to enhanced band-to-band tunneling (i.e. local Zener effect) is characterized based on a modified band-to-band tunneling model. To suppress the severe drain leakage current in the presence of high-dose halo implants, the impact of implant conditions on drain leakage current is estimated based on implant induced damage (point defect) profiles.

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来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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