超小型半导体器件的波动分析

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233646

P. Andrei, I. Mayergoyz

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引用次数: 3

摘要

提出了一种分析超小型半导体器件波动的方法。该技术应用于计算MOSFET器件阈值电压波动和终端特性由于掺杂随机波动和氧化物粗糙度引起的波动。它是基于输运方程相对于波动量的线性化。这种方法完全避免了许多器件实现的计算，因此，它在计算上比蒙特卡罗技术更有效。

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Analysis of fluctuations in ultra-small semiconductor devices

A technique for the analysis of fluctuations in ultra small semiconductor devices is presented. This technique is applied to the computation fluctuations of threshold voltages and terminal characteristics of MOSFET devices due to the random doping fluctuations and oxide roughness. It is based on the linearization of transport equations with respect to the fluctuating quantities. This approach completely avoids computations for many device realizations and, therefore, it is computationally much more efficient than Monte-Carlo techniques.

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来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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