CLIMATE (chip-level intertwined metal and active temperature estimator)

A. Labun, T. Reeve
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引用次数: 3

Abstract

ULSI interconnect temperature is critical for electromigration risk assessment because of the exponential dependence of lifetime on temperature and for performance issues such as timing which are sensitive to temperature-dependent resistance. Steady state wire temperature is a function of Joule self-heating within the wire, heat conducted along the wire, and heat coupled from the active devices and other nearby wires through the dielectric. Chip-level estimates of wire temperatures for HP's EV79 microprocessor require rapid processing of vast circuits and thus detailed physical calculations such as those based on 3D finite element models (FEM) are inappropriate. However, temperatures on such large devices can be accurately estimated at the resolution of individual segments of wire as extracted by geometric processing of the layout given each segment's relevant geometry, connectivity to other segments, current I/sub rms/, and the thermal conductances G/sup lat/ between them.
CLIMATE(芯片级缠绕金属和主动温度估计器)
ULSI互连温度对于电迁移风险评估至关重要,因为寿命与温度呈指数依赖关系,并且对于诸如对温度相关电阻敏感的时序等性能问题。稳态导线温度是导线内部焦耳自热、沿导线传导的热量以及通过电介质从有源器件和其他附近导线耦合而来的热量的函数。惠普EV79微处理器的芯片级电线温度估计需要对大量电路进行快速处理,因此基于3D有限元模型(FEM)的详细物理计算是不合适的。然而,这种大型器件上的温度可以精确地估计为单个线段的分辨率,通过给定每个线段的相关几何形状、与其他线段的连通性、电流I/sub rms/以及它们之间的热导率G/sup /,通过对布局进行几何处理提取。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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