半导体器件仿真矩阵稀疏线性求解技术的最新进展

O. Schenk, M. Hagemann, S. Rollin
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引用次数: 22

摘要

本文讨论了一般非对称线性方程组的鲁棒直接和迭代稀疏线性解的最新进展。主要重点是半导体器件模拟矩阵的鲁棒方法,但所有方法都是基于矩阵的结构,可以应用于其他应用领域,如电路仿真。可靠性、低内存占用和短求解时间是线性求解器的重要要求。目前,不存在能够满足所有条件的黑盒求解器。半导体器件模拟的线性系统可能是高度病态的,因此对直接和预条件迭代求解具有很大的挑战性。本文证明了在对角线上放置大条目的非对称排列和缩放极大地提高了直接法和迭代法的可靠性。数值实验表明,整体解决策略既可靠又具有很高的成本效益。本文还比较了求解一般稀疏系统的常用软件包的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recent advances in sparse linear solver technology for semiconductor device simulation matrices
This paper discusses recent advances in the development of robust direct and iterative sparse linear solvers for general unsymmetric linear systems of equations. The primary focus is on robust methods for semiconductor device simulations matrices, but all methods presented are solely based on the structure of the matrices and can be applied to other application areas e.g. circuit simulation. Reliability, a low memory-footprint, and a short solution time are important demands for the linear solver. Currently, no black-box solver exists that can satisfy all criteria. The linear systems from semiconductor device simulations can be highly ill-conditioned and therefore quite challenging for direct and preconditioned iterative solver. In this paper, it is shown that nonsymmetric permutations and scalings aimed at placing large entries on the diagonal greatly enhance the reliability of direct and iterative methods. The numerical experiments indicate that the overall solution strategy is both reliable and very cost effective. The paper also compares the performance of some common software packages for solving general sparse systems.
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