Microstructure development and evolution

M. Bloomfield, Y. Im, T. Cale
{"title":"Microstructure development and evolution","authors":"M. Bloomfield, Y. Im, T. Cale","doi":"10.1109/SISPAD.2003.1233627","DOIUrl":null,"url":null,"abstract":"We employ a level set-based geometry tracking software using a \"grain continuum\" representation, together with models for selected IC manufacturing processes and for microstructural evolution to study the development of grain structures. We consider electroless deposition, physical vapor deposition and grain boundary migration during curvature-driven ripening. We use an \"encapsulation technique\" to convert atomistic data; e.g., from Monte Carlo simulations of nucleation, to continua for input to deposition studies.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2003.1233627","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

We employ a level set-based geometry tracking software using a "grain continuum" representation, together with models for selected IC manufacturing processes and for microstructural evolution to study the development of grain structures. We consider electroless deposition, physical vapor deposition and grain boundary migration during curvature-driven ripening. We use an "encapsulation technique" to convert atomistic data; e.g., from Monte Carlo simulations of nucleation, to continua for input to deposition studies.
微观结构的发展与演变
我们采用基于水平集的几何跟踪软件,使用“晶粒连续体”表示,以及选定IC制造工艺和微观结构演变的模型来研究晶粒结构的发展。我们考虑了曲率驱动成熟过程中的化学沉积、物理气相沉积和晶界迁移。我们使用“封装技术”来转换原子数据;例如,从蒙特卡罗模拟成核,到连续输入沉积研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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