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13th IEEE International Semiconductor Laser Conference最新文献

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High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes 大功率无al埋置InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m)激光二极管
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763647
D. Garbuzov, N. Y. Antonishkis, N. D. Il'inskaya, S. Zhigulin, N. I. Katsavets, A. Kochergin, V. Z. Pyataev, M. Fuksman
{"title":"High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes","authors":"D. Garbuzov, N. Y. Antonishkis, N. D. Il'inskaya, S. Zhigulin, N. I. Katsavets, A. Kochergin, V. Z. Pyataev, M. Fuksman","doi":"10.1109/ISLC.1992.763647","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763647","url":null,"abstract":"Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124218264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers AlGaAs包层的低阈值应变GaInP量子阱脊激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763631
P. Unger, G. Bona, R. Germann, P. Roentgen, D. Webb
{"title":"Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding Layers","authors":"P. Unger, G. Bona, R. Germann, P. Roentgen, D. Webb","doi":"10.1109/ISLC.1992.763631","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763631","url":null,"abstract":"Low-threshold strained GalnP quantum well ridge lasers with AlGaAs cladding layers have been fabricated. Due to an electroplated heat spreader the devices can be operated junction-side up at temperatures up to 90//spl deg/C.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127868928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Optically pumped 370 nm UV laser form MQW Cd/ZnS/ZnS strained-layer superlattices 光抽运370 nm紫外激光形成MQW Cd/ZnS/ZnS应变层超晶格
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763620
Y. Yamada, J. T. Mullins, Y. Masumoto, T. Taguchi
{"title":"Optically pumped 370 nm UV laser form MQW Cd/ZnS/ZnS strained-layer superlattices","authors":"Y. Yamada, J. T. Mullins, Y. Masumoto, T. Taguchi","doi":"10.1109/ISLC.1992.763620","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763620","url":null,"abstract":"We have shown for the first time a laser structure suitable for the injection of minority carriers and optically pumped stimulated emission from widegap CdZnS/ZnS multiple-quantum well (MQW) strained-layer superlattices. Laser emission takes place around 375 nm at room temperature with the threshold power density of above 100 KW/cm/sup 2/. The MQW structure doped with I donor is demonstrated for the injection laser diode.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115152904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mode-locking of high-power resonant-optical-waveguide diode laser arrays 高功率谐振光波导二极管激光阵列的锁模
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763660
A. Mar, D. Dexickson, R. Helkey, J. Bowers, D. Botez
{"title":"Mode-locking of high-power resonant-optical-waveguide diode laser arrays","authors":"A. Mar, D. Dexickson, R. Helkey, J. Bowers, D. Botez","doi":"10.1109/ISLC.1992.763660","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763660","url":null,"abstract":"We report the first mode-locked operation of a resonant optical waveguide (ROIN) semiconductor laser array. Pulsewidths as short as 23 ps and peak powers of over 1W are generated in a single-lobed beam.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116144659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Characteristics of the laser diode with partially intermixed GaAs/AlGaAs Quantum Well 部分混合GaAs/AlGaAs量子阱的激光二极管特性
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763650
Y. Nagai, K. Shigihara, A. Takami, S. Karakida, M. Aiga
{"title":"Characteristics of the laser diode with partially intermixed GaAs/AlGaAs Quantum Well","authors":"Y. Nagai, K. Shigihara, A. Takami, S. Karakida, M. Aiga","doi":"10.1109/ISLC.1992.763650","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763650","url":null,"abstract":"In partially intermixed quantum well laser diode whose shift of bandgap energy is 47.8meV, the threshold current increses only 30% from non-intermixed one and good reliability is confirmed by aging test of 2000 hours at the temperature of 45°C.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128074047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly uniform 10 element laser array on the P-type substrate for the optical parallel data transmission system 用于光学并行数据传输系统的p型衬底上的高均匀10元激光阵列
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763589
H. Nishiguchi, T. Nishimura, E. Ishimura, Y. Nakajima, Y. Kokubo, R. Hirano, M. Aiga
{"title":"Highly uniform 10 element laser array on the P-type substrate for the optical parallel data transmission system","authors":"H. Nishiguchi, T. Nishimura, E. Ishimura, Y. Nakajima, Y. Kokubo, R. Hirano, M. Aiga","doi":"10.1109/ISLC.1992.763589","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763589","url":null,"abstract":"A 1.3/spl mu/m 10-element monolithic array on the P-type substrate with highly uniform characteristics has been fabricated for the first time. All elements have low threshold currents between 6.2 MA to 6.5 MA, and 12.2 MA to 13.2 MA at 25'C and 60/spl deg/C, respectively.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124138063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical and experimental investigation of the effect of state filling on high speed modulation dynamics of quantum well lasers 态填充对量子阱激光器高速调制动力学影响的理论与实验研究
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763611
B. Zhao, T. Chen, Y. Yamada, Y. Zhuang, N. Kuze, A. Yariv
{"title":"Theoretical and experimental investigation of the effect of state filling on high speed modulation dynamics of quantum well lasers","authors":"B. Zhao, T. Chen, Y. Yamada, Y. Zhuang, N. Kuze, A. Yariv","doi":"10.1109/ISLC.1992.763611","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763611","url":null,"abstract":"Several mechanisms have been proposed to explain the large variation in high speed modulation of semiconductor quantum well (QW) lasers, including carrier transport effects [1] and well barrier hole burning enhanced gain suppression [2]. We believe, however, that there exists another important effect, state filling effect [3,4], which has significant impact on the modulation dynamics in the QW lasers. The state filling effect accounts for the unavoidable permanent thermal population of injected carriers in the upper subbands of the QW structure, especially in the states of the separate confinement heterostructure region. The differential gain and transparency current, both, depend on the rate of increase of the quasi Fermi energies with increasing injected carrier density. The presence of upper subbands with large density of states tends to clamp the Feimi energies thus leading to low differential gain and high transparency current.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125063369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Visible lasers from red to blue 可见激光从红色到蓝色
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763548
H. Kukimoto
{"title":"Visible lasers from red to blue","authors":"H. Kukimoto","doi":"10.1109/ISLC.1992.763548","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763548","url":null,"abstract":"Visible semiconductor lasers have a wide variety of applications which include optical recording and reprographics in information processing, and potentially an application for flow cytometry in biotechnology if blue/green lasers become available. World-wide progress in visible semiconductor lasers over the period since the last IEEE International Semiconductor Laser Conference is reviewed, with emphasis on the achievement of low-threshold and high-power operation of red-emitting InGaAIP lasers and the emergence of blue/green emitting ZnSe-based lasers. Future prospect of short-wavelength lasers based on other materials including wide-bandgap II-Vls, GaN and related alloys, I-II-VI/sub 2/ families and AIP/GaP short-period superlattices is also presented.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126308682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure 高速低驱动电压MQW ea调制器集成了半绝缘BH结构的DFB激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763621
M. Aoki, M. Suzuki, M. Takahashi, H. Sano, T. Ido, T. Kawano, A. Takai
{"title":"High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure","authors":"M. Aoki, M. Suzuki, M. Takahashi, H. Sano, T. Ido, T. Kawano, A. Takai","doi":"10.1109/ISLC.1992.763621","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763621","url":null,"abstract":"EA-modulator integrated DFB lasers have become one of the key devices in multigigabit long-distance lightwave communications. [1, 2] Recently, a new method of integrating photonic devices has been proposed, using the in-plane local bandgap energy control of the MQW structures during simultaneous selective area growth (SAG) by MOCVD. [3, 4] This technique offers a high optical coupling efficiency as well as reproducible fabrication, which are essential in such optical integrated devices. This paper describes an MQW EA-modulator integrated with a DFB laser, fabricated by SAG and a semi-insulating BH process, aimed at a high on/off ratio and high-speed operation.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125535325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Progress in quantum well lasers: application of strain 量子阱激光器的进展:应变的应用
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763546
P. Thijs
{"title":"Progress in quantum well lasers: application of strain","authors":"P. Thijs","doi":"10.1109/ISLC.1992.763546","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763546","url":null,"abstract":"Quantum well (QW) lasers are now being made routinely due to the remarkably well-developed OMVPE, MBE, and related epitaxial growth techniques. Because of the quantization, with consequent modification of the density of states of the injected electrons and holes in an extremely thin active layer, this type of lasers has been demonstrated to be superior to conventional double heterostructure (DH) lasers e.g. in threshold current, differential gain, characteristic temperature, maximum operating temperature, and power conversion efficiency. Recently, strained-layer structures with the QW layer composed of a semiconductor having a significantly different lattice parameter to the substrate material, have been introduced. The built-in strain resulting from the tetragonal distortion of the QW layer, splits the degeneracy of the heavy hole (HH) and light hole (LH) bands at the zone centre facilitating a new range of band structures for further enhanced device performance [1,2]. To date, strained-layer QW lasers showing enhanced performance over lattice matched QW and DH lasers emitting at visible (Al/sub x/Ga/sub y/ln/sub 1-x-y/P/GaAs), near infrared (AI/sub xGa/sub y/ln/sub 1-x-y/As/GaAs, employing AlGaAs or InGaP cladding layers) and long wavelengths (ln/sub x/Ga1.,As,P,_,/lnP and AI,Ga/sub y/ln/sub 1-x-y/As/InP) have been reported. This paper reviews the present state of the art in lattice matched and strained-layer MQW lasers in the above mentioned materials systems.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130535453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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