D. Garbuzov, N. Y. Antonishkis, N. D. Il'inskaya, S. Zhigulin, N. I. Katsavets, A. Kochergin, V. Z. Pyataev, M. Fuksman
{"title":"大功率无al埋置InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m)激光二极管","authors":"D. Garbuzov, N. Y. Antonishkis, N. D. Il'inskaya, S. Zhigulin, N. I. Katsavets, A. Kochergin, V. Z. Pyataev, M. Fuksman","doi":"10.1109/ISLC.1992.763647","DOIUrl":null,"url":null,"abstract":"Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"190 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes\",\"authors\":\"D. Garbuzov, N. Y. Antonishkis, N. D. Il'inskaya, S. Zhigulin, N. I. Katsavets, A. Kochergin, V. Z. Pyataev, M. Fuksman\",\"doi\":\"10.1109/ISLC.1992.763647\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"190 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763647\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.
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