{"title":"Spectral linewidth characteristics of /spl lambda//4-Shifted MQW-DFB Lasers as a Function of Coupling Coefficient","authors":"M. Okai, T. Tsuchiya, A. Takai","doi":"10.1109/ISLC.1992.763663","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763663","url":null,"abstract":"The lasers used in coherent transmission systems need to produce output that has a narrow spectral linewidth, and this means that their rebroadening and linewidth floor have to be reduced. Spatial. hole burning has been suggested to cause rebroadening and to elevate the linewidth floor [1,2], and we have previously reported that a 56-kHz linewidth can be achieved by using a corrugation-pitch modulated structure to suppress spatial hole burning [3].","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"356 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125863413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Kitamura, H. Yamazaki, Hirohito Yamada, S. Takano, K. Kosuge, M. Yamaguchi, I. Mito
{"title":"Reliability of high power MQW-DFB-DC-PBH-LDs for Coherent Optical Communication System Application","authors":"M. Kitamura, H. Yamazaki, Hirohito Yamada, S. Takano, K. Kosuge, M. Yamaguchi, I. Mito","doi":"10.1109/ISLC.1992.763662","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763662","url":null,"abstract":"Result of aging test for 1.55/spl mu/m MQW-DFB-DC-PBH-LDs, in terms of spectral linewidth, FM characteristics and lasing wavelength, is reported. Over 10/sup 5/ hours reliability was estimated from long term aging and accelerated aging tests.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116751178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Phase modulation mode locking of semiconductor lasers in linear and coupled ring/linear extended cavities","authors":"R. Nagar, D. Abraham, G. Eisenstein","doi":"10.1109/ISLC.1992.763596","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763596","url":null,"abstract":"We describe pure phase modulation mode-locking in semiconductor lasers with linear or coupled ring / linear extended cavities. The phase modulation is obtained by non uniform pumping of two-section semiconductor gain medium.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124029051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Luo, H. Cao, M. Dobashi, H. Hosomatsu, Y. Nakano, K. Tada
{"title":"Gain-coupled DFB laser diode using novel absorptive conduction-type-inverted grating","authors":"Y. Luo, H. Cao, M. Dobashi, H. Hosomatsu, Y. Nakano, K. Tada","doi":"10.1109/ISLC.1992.763550","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763550","url":null,"abstract":"A gain-coupled DFB laser diode with an absorptive conduction-type-inverted grating has been fabricated. Low threshold current and linear operation are obtained by the conduction-type inversion. Moreover, ultralow chirping and narrow linewidth properties are demonstrated.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114358955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Hirata, M. Suehiro, M. Maeda, M. Hihar, H. Hosomatsu
{"title":"780-mn long-cavity DBR lasers with partially corrugated gratings fabricated by compositional disordering of a quantum well","authors":"T. Hirata, M. Suehiro, M. Maeda, M. Hihar, H. Hosomatsu","doi":"10.1109/ISLC.1992.763632","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763632","url":null,"abstract":"We report on 780-nm long-cavity DBR lasers with narrow spectral linewidth. The DBR section is integrated by compositional disordering of a quantum well, and the gratings are partially corrugated to control the coupling coefficient.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114750762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Wu, S. Kan, D. Vassilovski, K. Y. Lau, C. Zah, B. Pathak, R. Bhat, T. Lee
{"title":"On reaching the k-limited bandwidth in 1.6 /spl mu/m compressive-strained quantum well lasers","authors":"T. Wu, S. Kan, D. Vassilovski, K. Y. Lau, C. Zah, B. Pathak, R. Bhat, T. Lee","doi":"10.1109/ISLC.1992.763612","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763612","url":null,"abstract":"The intrinsic frequency response of 1.6 /spl mu/m compressive-strained QW lasers is measured to investigate a strategy to reach the K-limited modulation bandwidth. The highest 3dB bandwidth being measured is 18.6 GHz at 10/spl deg/C.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127698607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Ong, R. Takahash, M. Tsuchiya, Y. Ogawa, T. Kamiya
{"title":"Soliton compression (/spl tilde/ 1.2 ps) of gain-switched DFB laser using an erbium-doped fiber amplifier","authors":"J. Ong, R. Takahash, M. Tsuchiya, Y. Ogawa, T. Kamiya","doi":"10.1109/ISLC.1992.763591","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763591","url":null,"abstract":"Optimum conditions were studied systematically for a system consisting of a gain-switched DHB laser, an EDFA, and a soliton fiber. Compressed pulses around 1.2ps with suppressed pedestal and reasonable pulse energy of 40pJ were obtained.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127773957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Uchida, T. Miyamoto, N. Yokouchi, Y. Inaba, F. Koyama, K. Iga
{"title":"CBE grown 1.5 /spl mu/m GaInAsP/InP Surface Emitting Lasers","authors":"T. Uchida, T. Miyamoto, N. Yokouchi, Y. Inaba, F. Koyama, K. Iga","doi":"10.1109/ISLC.1992.763641","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763641","url":null,"abstract":"Two structures of GaInAsP/InP surface emitting laser structures have been demonstrated grown by chemical beam epitaxy (CBE). The threshold current as low as 2.6mA was obtained under 77K cw operation (the lowest cw threshold at 77K). Near room temperature pulsed operation is also achieved using a composite GaInAsP/InP grown mirror.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128036537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Calculation of combined lateral and longitudinal spatial hole burning in /spl lambda//4 sbifted DFB lasers","authors":"U. Bandelow, H. Wenzel, H. Wunsche","doi":"10.1109/ISLC.1992.763560","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763560","url":null,"abstract":"A remarkable influence of inhomageneous injection, negative detuning and variations of the local a factor on side mode suppression, kink power and linewidth, respectively, is obtained from quasi 3D calculations.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"351 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125628625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Coupling mechanism of two dimensional reflectivity modulated vertical cavity semiconductor laser arrays","authors":"M. Orenstein, T. Fishman","doi":"10.1109/ISLC.1992.763576","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763576","url":null,"abstract":"Experimental results as well as theoretical modeling of the coupling mechanisrn of reflectivity modulated vertical cavity surface emitting laser are presented. Regimes of weak coupling, strong coupling and the corresponding array modes were analyzed.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130013804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}