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13th IEEE International Semiconductor Laser Conference最新文献

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Integration of a multi-wavelength compressive-strained multi-quantum-well distributed-feedback laser array with a star coupler and optical amplifiers 星形耦合器和光放大器集成多波长压缩应变多量子均匀分布反馈激光阵列
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763633
C. Zah, F. Favire, B. Pathak, R. Bhat, C. Caneau, P. Lin, A. Góźdź, N. Andreadakis, M. Koza, T. Lee
{"title":"Integration of a multi-wavelength compressive-strained multi-quantum-well distributed-feedback laser array with a star coupler and optical amplifiers","authors":"C. Zah, F. Favire, B. Pathak, R. Bhat, C. Caneau, P. Lin, A. Góźdź, N. Andreadakis, M. Koza, T. Lee","doi":"10.1109/ISLC.1992.763633","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763633","url":null,"abstract":"We report the integration of a multi-wavelength multi-quantum-well distributed-feedback (DFB) laser array with a star coupler and optical booster amplifiers on the same chip for future wavelength-division multiplexed lightwave communication systems and multi-wavelength optical networks.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131894763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers 应变和非应变InGaAs/InGaAsP多量子阱激光器中的俄歇复合
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763554
G. Fuchs, C. Schiedel, A. Hangleiter, V. Hirle, F. Scholz
{"title":"Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers","authors":"G. Fuchs, C. Schiedel, A. Hangleiter, V. Hirle, F. Scholz","doi":"10.1109/ISLC.1992.763554","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763554","url":null,"abstract":"We report the determination of the Auger recombination coefficient in unstrained and strained InGaAs/InGaAsP/InP SC-MQW laser structures. The weak temperature dependence of the Auger coefficient indicates the dominance of the phonon-assisted CHSH Auger process. For T = 300K and L/sub z/ = 100/spl Aring/ we find C = 1.0 - 10/sup -28/crn/sup 6/s/sup -1/, independent of strain.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"226 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130808896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
All-optical modulation of semiconductor laser by using three energy levels in n-doped quantum well 掺n量子阱中三能级半导体激光器的全光调制
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763599
S. Noda, T. Yamashita, M. Ohya, Y. Muromoto, A. Sasaki
{"title":"All-optical modulation of semiconductor laser by using three energy levels in n-doped quantum well","authors":"S. Noda, T. Yamashita, M. Ohya, Y. Muromoto, A. Sasaki","doi":"10.1109/ISLC.1992.763599","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763599","url":null,"abstract":"A new all-optical modulation of semiconductor laser is demonstrated by using three energy levels in n-doped quantum well. It is shown experimentally that the interband-light (semiconductor laser light) can be modulated by the intraband-light (CO/sub 2/ laser light).","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117341964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Coherent 2-D surface-emitting arrays of antiguides 相干二维反波导表面发射阵列
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763642
L. Mawst, D. Botez, M. Jansen, C. Zmudzinski, S. Ou, M. Sergant, T. Roth, C. Tu, G. Peterson, J.J. Yang
{"title":"Coherent 2-D surface-emitting arrays of antiguides","authors":"L. Mawst, D. Botez, M. Jansen, C. Zmudzinski, S. Ou, M. Sergant, T. Roth, C. Tu, G. Peterson, J.J. Yang","doi":"10.1109/ISLC.1992.763642","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763642","url":null,"abstract":"2-D phase locking employing leaky waves is demonstrated for the first time by using four surface-emitting, 20-element arrays of antiguides. The 2-D-array units are resonantly coupled via controlled current injection through interunit electrodes. Array unit length differences can be compensated for by phase shifts induced between units.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123701951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization insensitive amplification at 1.5/spl mu/m wavelength using tensile strained multiple quantum well structures 利用拉伸应变多量子阱结构在1.5/spl mu/m波长下进行偏振不敏感放大
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763603
M. Jorna, H. Horikawa, C. Xu, K. Yamada, Y. Katoh, T. Kamijoh
{"title":"Polarization insensitive amplification at 1.5/spl mu/m wavelength using tensile strained multiple quantum well structures","authors":"M. Jorna, H. Horikawa, C. Xu, K. Yamada, Y. Katoh, T. Kamijoh","doi":"10.1109/ISLC.1992.763603","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763603","url":null,"abstract":"For 1.5/spl mu/m wavelength, a high gain of 15 dB under polarization insensitive operation has been demonstrated by a newly developed semiconductor optical amplifier with a small tensile strain (0.2%) introduced to 8 nm-thick quantum wells. TE and TM mode gain characteristics have been investigated as a function of device length and strain.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122106011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of 2.2 /spl mu/m emission ridge waveguide lasers with low threshold GaInAsSb/GaAlAsSb DH wafers 低阈值GaInAsSb/GaAlAsSb DH晶圆2.2 /spl μ m发射脊波导激光器的研制
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763571
M. Morosini, J. Herrera-Pérez, A. D. da Silveira, A. V. Von Zuben, M. Loural, N. Patel
{"title":"Development of 2.2 /spl mu/m emission ridge waveguide lasers with low threshold GaInAsSb/GaAlAsSb DH wafers","authors":"M. Morosini, J. Herrera-Pérez, A. D. da Silveira, A. V. Von Zuben, M. Loural, N. Patel","doi":"10.1109/ISLC.1992.763571","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763571","url":null,"abstract":"We show that the development of 2.Z/spl mu/m emission low threshold Ridge Waveguide lasers from GaInAsSb/GaAIAsSb DH wafers is limited by the excessive current spread in the low resistivity p-type active layer.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122166618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
4 section DBR laser for low chirp IM or FSK modulation 4节DBR激光器用于低啁啾IM或FSK调制
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763583
J. Provost, J. Jacquet, P. Pagnod-Rossiaux, F. Gaborit, E. Gaumont-Goarin, C. Labourie, F. Leblond, D. Sigogne, L. Le Goudzigou, D. Lesterlin, D. Leclerc
{"title":"4 section DBR laser for low chirp IM or FSK modulation","authors":"J. Provost, J. Jacquet, P. Pagnod-Rossiaux, F. Gaborit, E. Gaumont-Goarin, C. Labourie, F. Leblond, D. Sigogne, L. Le Goudzigou, D. Lesterlin, D. Leclerc","doi":"10.1109/ISLC.1992.763583","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763583","url":null,"abstract":"We present a 4 section DBR laser which can be used either as a low chirp tunable source or as a tunable FSK transmitter with a high and flat FM response up to 1 GHz.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125955360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Room temperature operation of circular grating surface-emitting laser 圆光栅面发射激光器的室温工作
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763581
Chun-qiang Wu, M. Svilans, T. Makino, J. Glinski, C. Blaauw, C. Maritan, G. Knight, M. Fallahi, I. Templeton, R. Maciejko, I. Najafi
{"title":"Room temperature operation of circular grating surface-emitting laser","authors":"Chun-qiang Wu, M. Svilans, T. Makino, J. Glinski, C. Blaauw, C. Maritan, G. Knight, M. Fallahi, I. Templeton, R. Maciejko, I. Najafi","doi":"10.1109/ISLC.1992.763581","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763581","url":null,"abstract":"We report room temperature operation of an electrically-pumped circular grating surface-emitting DBR laser. The InGaAsP/InP device emits more than IOmW at a wavelength of 1.3m under pulsed excitation.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126123925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-power multi-beam AlGaAs TQW lasers with buried-ridge, stripe structure fabricated by using novel etching stop technique 采用新型刻蚀停止技术制备了具有埋脊、条纹结构的高功率多束AlGaAs TQW激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763590
A. Shima, T. Kadowaki, H. Tada, T. Miura, T. Shiba, M. Miyashita, S. Kageyarna, E. Omura, M. Aiga, K. Ikeda
{"title":"High-power multi-beam AlGaAs TQW lasers with buried-ridge, stripe structure fabricated by using novel etching stop technique","authors":"A. Shima, T. Kadowaki, H. Tada, T. Miura, T. Shiba, M. Miyashita, S. Kageyarna, E. Omura, M. Aiga, K. Ikeda","doi":"10.1109/ISLC.1992.763590","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763590","url":null,"abstract":"","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129413353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Sub-picosecond pulse generation at 1.3/spl mu/m by hybrid mode locking 通过混合模式锁定以1.3/spl mu/m的速度产生亚皮秒脉冲
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763657
M. Schell, A. Weber, D. Bimberg
{"title":"Sub-picosecond pulse generation at 1.3/spl mu/m by hybrid mode locking","authors":"M. Schell, A. Weber, D. Bimberg","doi":"10.1109/ISLC.1992.763657","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763657","url":null,"abstract":"Lightpulses as short as 0.7 ps (FWHM) at 1.3/spl mu/m are generated by a synchronously pumped laser in an external cavity. An absorber is created by ion-bombarding one facet. The measured pulse parameters are theoretically analyzed.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128617812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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