Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763554

G. Fuchs, C. Schiedel, A. Hangleiter, V. Hirle, F. Scholz

引用次数: 8

Abstract

We report the determination of the Auger recombination coefficient in unstrained and strained InGaAs/InGaAsP/InP SC-MQW laser structures. The weak temperature dependence of the Auger coefficient indicates the dominance of the phonon-assisted CHSH Auger process. For T = 300K and L/sub z/ = 100/spl Aring/ we find C = 1.0 - 10/sup -28/crn/sup 6/s/sup -1/, independent of strain.

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应变和非应变InGaAs/InGaAsP多量子阱激光器中的俄歇复合

本文报道了未应变和应变InGaAs/InGaAsP/InP SC-MQW激光结构中埃格复合系数的测定。俄歇系数的弱温度依赖性表明声子辅助CHSH俄歇过程占主导地位。对于T = 300K和L/sub z/ = 100/spl，我们发现C = 1.0 - 10/sup -28/crn/sup 6/s/sup -1/，与应变无关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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13th IEEE International Semiconductor Laser Conference

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