G. Fuchs, C. Schiedel, A. Hangleiter, V. Hirle, F. Scholz
{"title":"Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers","authors":"G. Fuchs, C. Schiedel, A. Hangleiter, V. Hirle, F. Scholz","doi":"10.1109/ISLC.1992.763554","DOIUrl":null,"url":null,"abstract":"We report the determination of the Auger recombination coefficient in unstrained and strained InGaAs/InGaAsP/InP SC-MQW laser structures. The weak temperature dependence of the Auger coefficient indicates the dominance of the phonon-assisted CHSH Auger process. For T = 300K and L/sub z/ = 100/spl Aring/ we find C = 1.0 - 10/sup -28/crn/sup 6/s/sup -1/, independent of strain.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"226 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763554","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
We report the determination of the Auger recombination coefficient in unstrained and strained InGaAs/InGaAsP/InP SC-MQW laser structures. The weak temperature dependence of the Auger coefficient indicates the dominance of the phonon-assisted CHSH Auger process. For T = 300K and L/sub z/ = 100/spl Aring/ we find C = 1.0 - 10/sup -28/crn/sup 6/s/sup -1/, independent of strain.