{"title":"Carrier leakage in 1.3/spl mu/m SCH quantum well lasers","authors":"S. Hausser, C. Harder, H. Meier","doi":"10.1109/ISLC.1992.763649","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763649","url":null,"abstract":"We demonstrate 1300 nm SCH quantum well lasers grown by CBE with low threshold and high efficiency. Spontaneous emission measurements of these lasers indicate strong carrier leakage. This reduces To to values around 55 K.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126629077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Liou, A. Dentai, E. Burrows, R. Gnall, C. Joyner, C. Burrus
{"title":"High-power multiple-quantum-well distributed feedback laser arrays and Fabry-Perot laser arrays at 1.5/spl mu/m wavelength","authors":"K. Liou, A. Dentai, E. Burrows, R. Gnall, C. Joyner, C. Burrus","doi":"10.1109/ISLC.1992.763585","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763585","url":null,"abstract":"We report on coherent high-power 12-element laser arrays of both the DFB and FP types. Pulsed emission up to 450 mW/facet and CW output to 85 mW are demonstrated with a single-wavelength spectrum for DFB arrays and multi mode output from FP arrays.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126631411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Wavelength tunable InGaAsP/InP multiple-/spl lambda//4-shifted distributed feedback laser","authors":"K. Utaka, M. Tsurusawa, M. Horita, Y. Matsushima","doi":"10.1109/ISLC.1992.763584","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763584","url":null,"abstract":"A tunable InGaAsP/InP multiple /spl lambda//4-shifted DFB laser is demonstrated. Continuous wavelength tuning was obtained with a range of 1.7nm. Low spectral linewidth and flat FM response with 0.65GHz/mA efficiency is also presented.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126482361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Gfeller, P. Buchmann, P. Epperlein, H. Meier, J. Reithmaier
{"title":"High-power AlGaAs lasers with nonabsorbing etched mirrors based on a bent-waveguide structure","authors":"F. Gfeller, P. Buchmann, P. Epperlein, H. Meier, J. Reithmaier","doi":"10.1109/ISLC.1992.763646","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763646","url":null,"abstract":"A nonabsorbing etched mirror structure for AlGaAs SQW-GRINSCH ridge lasers is discussed with respect to mirror coupling coefficient, threshold current penalty, farfield pattern, fourfold catastrophic optical power level improvement, and mirror temperature.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126585667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Ueno, H. Fujii, H. Sawano, K. Endo, K. Kobayashi, K. Hara
{"title":"30 mw 690 nm high-power strained-quantum-well AlGaInP laser with Al/sub 2/O/sub 3/-coated mirror facets","authors":"Y. Ueno, H. Fujii, H. Sawano, K. Endo, K. Kobayashi, K. Hara","doi":"10.1109/ISLC.1992.763586","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763586","url":null,"abstract":"Abstract: 30-mW stable operation at 500C over 2,000 hours has been achieved for transverse-mode-stabilized 690-nm AlGaInp lasers by using Al/sub 2/O/sub 3/-coated mirror facets and a strained-quanturn-well active layer.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115950017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Quantum mechanical modelling of realistic FP laser diodes","authors":"D. Marcenac, J. E. Carroll","doi":"10.1109/ISLC.1992.763559","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763559","url":null,"abstract":"New quantum-mechanical time-domain model of FP multimode laser diode includes spatial hole burning, correct random spontaneous photon emission, associated correlated electron density and intermodal photon fluctuations. Spectra, including required correction factors. are presented.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115958249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Hiroyama, H. Hamada, M. Shono, S. Honda, K. Yodoshi, T. Yamaguchi
{"title":"630 nm-band AlGaInP strained MQW laser diodes with an MQB grown on misoriented substrates","authors":"R. Hiroyama, H. Hamada, M. Shono, S. Honda, K. Yodoshi, T. Yamaguchi","doi":"10.1109/ISLC.1992.763616","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763616","url":null,"abstract":"We report on 630 nm-band AIGalnP strained MQW laser diodes incorporating an MQB. The laser offer high-temperature operation over 60/spl deg/C and have been operating reliably for more than 1,000 h under 3 mW at 45/spl deg/C.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127553608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Numai, K. Kurihara, I. Ogura, H. Kosaka, M. Sugimoto, K. Kasahara
{"title":"Effect of sidewall reflector on current versus light-output in a pnpn vertical to surface transmission electro-photonic device with a vertical cavity","authors":"T. Numai, K. Kurihara, I. Ogura, H. Kosaka, M. Sugimoto, K. Kasahara","doi":"10.1109/ISLC.1992.763575","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763575","url":null,"abstract":"Current versus light-output characteristics in a pnpn vertical to surface transmission electro-photonic device with a vertical cavity are studied. It is shown that sidewall reflector leads to threshold reduction due to photon recycling.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133047183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Fujihara, M. Ishino, S. Yamane, K. Fujito, H. Sato, Yasuhiro Matsui
{"title":"1.3 /spl mu/m MQW-DFB Laser with Negative Detuning for 80 ch-20 km AM-FDM Transmission","authors":"K. Fujihara, M. Ishino, S. Yamane, K. Fujito, H. Sato, Yasuhiro Matsui","doi":"10.1109/ISLC.1992.763661","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763661","url":null,"abstract":"Broadband low distortion characteristics with high power operation have been confirmed in 1.3/spl mu/m MQW-DFB laser with negative detuning, for the first time. Using this laser, 80ch-20km AM FDM transmission is successfully demonstrated.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114512213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Hangleiter, A. Grabmaier, M. Schofthaler, C. Kazmierski, M. Blez, A. Ougazzaden
{"title":"Direct evidence for transport limited bandwidth of 1.55/spl mu/m quantum well lasers","authors":"A. Hangleiter, A. Grabmaier, M. Schofthaler, C. Kazmierski, M. Blez, A. Ougazzaden","doi":"10.1109/ISLC.1992.763613","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763613","url":null,"abstract":"We report on the first direct experimental observation of an intrinsic RC-like band width limitation in 1.55 /spl mu/m multi quantum well lasers. This intrinsic limitation is at tributed to carrier transport processes within the active region.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"324 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125780938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}