{"title":"1.3/spl μ m SCH量子阱激光器的载流子泄漏","authors":"S. Hausser, C. Harder, H. Meier","doi":"10.1109/ISLC.1992.763649","DOIUrl":null,"url":null,"abstract":"We demonstrate 1300 nm SCH quantum well lasers grown by CBE with low threshold and high efficiency. Spontaneous emission measurements of these lasers indicate strong carrier leakage. This reduces To to values around 55 K.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Carrier leakage in 1.3/spl mu/m SCH quantum well lasers\",\"authors\":\"S. Hausser, C. Harder, H. Meier\",\"doi\":\"10.1109/ISLC.1992.763649\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate 1300 nm SCH quantum well lasers grown by CBE with low threshold and high efficiency. Spontaneous emission measurements of these lasers indicate strong carrier leakage. This reduces To to values around 55 K.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763649\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763649","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Carrier leakage in 1.3/spl mu/m SCH quantum well lasers
We demonstrate 1300 nm SCH quantum well lasers grown by CBE with low threshold and high efficiency. Spontaneous emission measurements of these lasers indicate strong carrier leakage. This reduces To to values around 55 K.
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