630 nm-band AlGaInP strained MQW laser diodes with an MQB grown on misoriented substrates

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763616

R. Hiroyama, H. Hamada, M. Shono, S. Honda, K. Yodoshi, T. Yamaguchi

引用次数: 6

Abstract

We report on 630 nm-band AIGalnP strained MQW laser diodes incorporating an MQB. The laser offer high-temperature operation over 60/spl deg/C and have been operating reliably for more than 1,000 h under 3 mW at 45/spl deg/C.

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630nm波段AlGaInP应变MQW激光二极管与MQB生长在错位衬底

我们报道了630 nm波段的AIGalnP应变MQW激光二极管。该激光器可提供超过60/spl度/C的高温操作，并在45/spl度/C下，在3 mW下可靠运行超过1000小时。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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