InGaAsP/InP调制掺杂应变多量子阱激光器线宽增强因子的降低

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763558

F. Kano, T. Yamanaka, N. Yamamoto, Y. Yoshikuni, H. Mawatari, Y. Tohmori, M. Yamamoto, K. Yokoyama

{"title":"InGaAsP/InP调制掺杂应变多量子阱激光器线宽增强因子的降低","authors":"F. Kano, T. Yamanaka, N. Yamamoto, Y. Yoshikuni, H. Mawatari, Y. Tohmori, M. Yamamoto, K. Yokoyama","doi":"10.1109/ISLC.1992.763558","DOIUrl":null,"url":null,"abstract":"Reduction of the linewidth enhancement factor cc is demonstrated in 1.3 /spl mu/m InGaAsP/InP modulation-doped strained multiple-quantum-well lasers. A small /spl alpha/ value of less than I is obtained with positive gain.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Reduction of linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers\",\"authors\":\"F. Kano, T. Yamanaka, N. Yamamoto, Y. Yoshikuni, H. Mawatari, Y. Tohmori, M. Yamamoto, K. Yokoyama\",\"doi\":\"10.1109/ISLC.1992.763558\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reduction of the linewidth enhancement factor cc is demonstrated in 1.3 /spl mu/m InGaAsP/InP modulation-doped strained multiple-quantum-well lasers. A small /spl alpha/ value of less than I is obtained with positive gain.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763558\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

在1.3 /spl mu/m掺杂InGaAsP/InP调制的应变多量子阱激光器中，线宽增强因子cc降低。小于1的小/spl alpha/值获得正增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Reduction of linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers

Reduction of the linewidth enhancement factor cc is demonstrated in 1.3 /spl mu/m InGaAsP/InP modulation-doped strained multiple-quantum-well lasers. A small /spl alpha/ value of less than I is obtained with positive gain.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

13th IEEE International Semiconductor Laser Conference

自引率

0.00%

发文量