Reduction of linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763558

F. Kano, T. Yamanaka, N. Yamamoto, Y. Yoshikuni, H. Mawatari, Y. Tohmori, M. Yamamoto, K. Yokoyama

引用次数: 9

Abstract

Reduction of the linewidth enhancement factor cc is demonstrated in 1.3 /spl mu/m InGaAsP/InP modulation-doped strained multiple-quantum-well lasers. A small /spl alpha/ value of less than I is obtained with positive gain.

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InGaAsP/InP调制掺杂应变多量子阱激光器线宽增强因子的降低

在1.3 /spl mu/m掺杂InGaAsP/InP调制的应变多量子阱激光器中，线宽增强因子cc降低。小于1的小/spl alpha/值获得正增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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