30 mw 690 nm high-power strained-quantum-well AlGaInP laser with Al/sub 2/O/sub 3/-coated mirror facets

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763586

Y. Ueno, H. Fujii, H. Sawano, K. Endo, K. Kobayashi, K. Hara

引用次数: 1

Abstract

Abstract: 30-mW stable operation at 500C over 2,000 hours has been achieved for transverse-mode-stabilized 690-nm AlGaInp lasers by using Al/sub 2/O/sub 3/-coated mirror facets and a strained-quanturn-well active layer.

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具有Al/sub 2/O/sub 3/涂层镜面面的30 mw 690 nm高功率应变量子阱AlGaInP激光器

摘要:采用Al/sub - 2/O/sub - 3/涂层镜面和应变量子阱有源层，实现了690 nm横向模稳定690nm AlGaInp激光器在500C下2000小时内30 mw的稳定工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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