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High speed high sensitivity simultaneous detection and amplification with semiconductor laser amplifiers 采用半导体激光放大器进行高速、高灵敏度的同时检测和放大
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763604
R. Dall'ara, H. Melchior
{"title":"High speed high sensitivity simultaneous detection and amplification with semiconductor laser amplifiers","authors":"R. Dall'ara, H. Melchior","doi":"10.1109/ISLC.1992.763604","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763604","url":null,"abstract":"A laser amplifier has been successfully used as amplifier/detector up to 1.2 Gbit/s with sensitivity of -29.5 dBm at BER of 10/sup -9/ with a simultaneous cavity gain of 24 dB. To our knowledge these results represent an improvement of 10 dB compared with previously published results.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129554580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Differential gain reduction in quantum well lasers due to confinement factor modulation 约束因子调制导致的量子阱激光器差分增益降低
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763614
S. Shin, C. Su, J. Lacourse, W. Rideout, R. Lauer
{"title":"Differential gain reduction in quantum well lasers due to confinement factor modulation","authors":"S. Shin, C. Su, J. Lacourse, W. Rideout, R. Lauer","doi":"10.1109/ISLC.1992.763614","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763614","url":null,"abstract":"A new mechanism is described that is based on the modulation of the confinement factor in quantum well lasers and that can reduce differential gain and thus hirdt bandwidth.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128637069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental and theoretical analysis of the carrier induced red-shifted FM-response of /spl delta//4-shifted MQW DFB LD /spl δ //4移MQW DFB LD载波诱导红移fm响应的实验与理论分析
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763624
M. J. Steinmann, R. Pedersen, Y. Kotaki
{"title":"Experimental and theoretical analysis of the carrier induced red-shifted FM-response of /spl delta//4-shifted MQW DFB LD","authors":"M. J. Steinmann, R. Pedersen, Y. Kotaki","doi":"10.1109/ISLC.1992.763624","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763624","url":null,"abstract":"The FM-response of 3-section /spl lambda//4-shifted DFB lasers has been investigated theoretically and experimentctily considering spatial hole burning. A perfect agreement between experimental results and our theoretical simulations is demonstrated.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124600613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low threshold 1.3 /spl mu/m strained-layer Al/sub x/Ga/sub y/ln/sub 1-x-y/As Quantum Well Lasers 低阈值1.3 /spl mu/m应变层Al/sub x/Ga/sub y/ln/sub 1-x-y/As量子阱激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763637
C. Zah, R. Bhat, P.J. Favire, M. Koza, T. Lee
{"title":"Low threshold 1.3 /spl mu/m strained-layer Al/sub x/Ga/sub y/ln/sub 1-x-y/As Quantum Well Lasers","authors":"C. Zah, R. Bhat, P.J. Favire, M. Koza, T. Lee","doi":"10.1109/ISLC.1992.763637","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763637","url":null,"abstract":"We demonstrate low threshold 1.3-/spl mu/m lasers using compressive- as well as tensile-strained single Al/sub x/Ga/sub y/ln/sub 1-x-y/As quantum well (100 A/cm2 and 188 A/CM/sup 2/ respectively). Low threshold currents of 2 mA at 25 /spl deg/C and 14 mA at 100 /spl deg/C are achieved for the ridge waveguide lasers.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126964156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low threshold 1.3/spl mu/m InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition 金属有机化学气相沉积制备低阈值1.3/spl μ m InAsP/InP应变层量子阱激光二极管
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763636
A. Kasukawa, Y. Imajo, T. Namegaya, Y. Hiratani, T. Kikuta
{"title":"Low threshold 1.3/spl mu/m InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition","authors":"A. Kasukawa, Y. Imajo, T. Namegaya, Y. Hiratani, T. Kikuta","doi":"10.1109/ISLC.1992.763636","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763636","url":null,"abstract":"A very low threshold current density of 450A/cm/sup 2/ was obtained in a novel 1.3/spl mu/m InAsP/InP strained layer quantum well laser diode (LD) for the first time. Threshold current as low as 5.5mA was obtained in a buried heterostructure LD.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126728339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Dynamic response of the gain coupled DFB laser 增益耦合DFB激光器的动态响应
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763561
L.M. Zhang, J. E. Carroll, C. Tsang
{"title":"Dynamic response of the gain coupled DFB laser","authors":"L.M. Zhang, J. E. Carroll, C. Tsang","doi":"10.1109/ISLC.1992.763561","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763561","url":null,"abstract":"Modal and chirp characteristics of gain-coupled DFB diode lasers are investigated by new dynamic analysis including variations in gain-coupling with electron density, facet reflection phase, spontaneous emission, and hole burning along the laser.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127384163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Reduction of linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers InGaAsP/InP调制掺杂应变多量子阱激光器线宽增强因子的降低
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763558
F. Kano, T. Yamanaka, N. Yamamoto, Y. Yoshikuni, H. Mawatari, Y. Tohmori, M. Yamamoto, K. Yokoyama
{"title":"Reduction of linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers","authors":"F. Kano, T. Yamanaka, N. Yamamoto, Y. Yoshikuni, H. Mawatari, Y. Tohmori, M. Yamamoto, K. Yokoyama","doi":"10.1109/ISLC.1992.763558","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763558","url":null,"abstract":"Reduction of the linewidth enhancement factor cc is demonstrated in 1.3 /spl mu/m InGaAsP/InP modulation-doped strained multiple-quantum-well lasers. A small /spl alpha/ value of less than I is obtained with positive gain.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133580738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region 具有量子线大小有源区的GaInAs/GaInAsP/InP SCH激光器的室温连续工作
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763651
Y. Miyake, H. Hirayama, S. Tamura, J. Yoshida, S. Arai, Y. Suematsu
{"title":"Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region","authors":"Y. Miyake, H. Hirayama, S. Tamura, J. Yoshida, S. Arai, Y. Suematsu","doi":"10.1109/ISLC.1992.763651","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763651","url":null,"abstract":"A room temperature CW operation of a GaInAs/GaInAsP/InP SCH quantum-wire laser with 5nm thick and 10-30nm wide vertically stacked triple-wire active region was achieved by using 2-step LP-OMVPE growth on p-type InP substrate, to increase the hole injection efficiency, and direct writing by an electron beam exposure followed by wet chemical etching.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116660895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improvement of high power/high temperature operation of long wavelength laser diodes by band discontinuity reduction layer 带不连续降阶层对长波激光二极管高功率高温工作性能的改善
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763565
A. Takemoto, K. Matsurnoto, H. Nishiguchi, T. Takiguchi, Y. Nakajima, E. Omura, M. Aiga
{"title":"Improvement of high power/high temperature operation of long wavelength laser diodes by band discontinuity reduction layer","authors":"A. Takemoto, K. Matsurnoto, H. Nishiguchi, T. Takiguchi, Y. Nakajima, E. Omura, M. Aiga","doi":"10.1109/ISLC.1992.763565","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763565","url":null,"abstract":"50 percent increase of maximum output power and 25 percent decrease of operating current at 70/spl deg/C,5mW in long wavelength laser diodes have been realized by the introduction of intermediate composite layer between a cladding layer and an active layer.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132889357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparative study of extremely low threshold 1.3/spl mu/m strained and lattice matched quantum well lasers 极低阈值1.3/spl μ m应变与晶格匹配量子阱激光器的比较研究
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763556
A. Mathur, J. Osinski, P. Grodzinski, P. Dapkus
{"title":"Comparative study of extremely low threshold 1.3/spl mu/m strained and lattice matched quantum well lasers","authors":"A. Mathur, J. Osinski, P. Grodzinski, P. Dapkus","doi":"10.1109/ISLC.1992.763556","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763556","url":null,"abstract":"1.3 /spl mu/m quantum well lasers using compressively strained wells have been fabricated with threshold current density as low as 214 A/cm/sup 2/. A comparison with low threshold lattice matched and tensile strained quantum well lasers is presented.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133315831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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