{"title":"低阈值1.3 /spl mu/m应变层Al/sub x/Ga/sub y/ln/sub 1-x-y/As量子阱激光器","authors":"C. Zah, R. Bhat, P.J. Favire, M. Koza, T. Lee","doi":"10.1109/ISLC.1992.763637","DOIUrl":null,"url":null,"abstract":"We demonstrate low threshold 1.3-/spl mu/m lasers using compressive- as well as tensile-strained single Al/sub x/Ga/sub y/ln/sub 1-x-y/As quantum well (100 A/cm2 and 188 A/CM/sup 2/ respectively). Low threshold currents of 2 mA at 25 /spl deg/C and 14 mA at 100 /spl deg/C are achieved for the ridge waveguide lasers.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Low threshold 1.3 /spl mu/m strained-layer Al/sub x/Ga/sub y/ln/sub 1-x-y/As Quantum Well Lasers\",\"authors\":\"C. Zah, R. Bhat, P.J. Favire, M. Koza, T. Lee\",\"doi\":\"10.1109/ISLC.1992.763637\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate low threshold 1.3-/spl mu/m lasers using compressive- as well as tensile-strained single Al/sub x/Ga/sub y/ln/sub 1-x-y/As quantum well (100 A/cm2 and 188 A/CM/sup 2/ respectively). Low threshold currents of 2 mA at 25 /spl deg/C and 14 mA at 100 /spl deg/C are achieved for the ridge waveguide lasers.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763637\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763637","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We demonstrate low threshold 1.3-/spl mu/m lasers using compressive- as well as tensile-strained single Al/sub x/Ga/sub y/ln/sub 1-x-y/As quantum well (100 A/cm2 and 188 A/CM/sup 2/ respectively). Low threshold currents of 2 mA at 25 /spl deg/C and 14 mA at 100 /spl deg/C are achieved for the ridge waveguide lasers.
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