具有量子线大小有源区的GaInAs/GaInAsP/InP SCH激光器的室温连续工作

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763651

Y. Miyake, H. Hirayama, S. Tamura, J. Yoshida, S. Arai, Y. Suematsu

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引用次数: 1

摘要

采用两步LP-OMVPE生长方法，在p型InP衬底上实现了5nm厚、10-30nm宽垂直堆叠三线有源区的GaInAs/GaInAsP/InP SCH量子线激光器的室温连续工作，提高了空穴注入效率，并通过电子束曝光和湿化学刻蚀直接写入。

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Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region

A room temperature CW operation of a GaInAs/GaInAsP/InP SCH quantum-wire laser with 5nm thick and 10-30nm wide vertically stacked triple-wire active region was achieved by using 2-step LP-OMVPE growth on p-type InP substrate, to increase the hole injection efficiency, and direct writing by an electron beam exposure followed by wet chemical etching.

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13th IEEE International Semiconductor Laser Conference

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