Low threshold 1.3/spl mu/m InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763636

A. Kasukawa, Y. Imajo, T. Namegaya, Y. Hiratani, T. Kikuta

引用次数: 8

Abstract

A very low threshold current density of 450A/cm/sup 2/ was obtained in a novel 1.3/spl mu/m InAsP/InP strained layer quantum well laser diode (LD) for the first time. Threshold current as low as 5.5mA was obtained in a buried heterostructure LD.

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金属有机化学气相沉积制备低阈值1.3/spl μ m InAsP/InP应变层量子阱激光二极管

在新型1.3/spl μ m InAsP/InP应变层量子阱激光二极管(LD)中，首次获得了450A/cm/sup / /的极低阈值电流密度。在埋藏异质结构LD中获得了低至5.5mA的阈值电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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