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High-speed operation of strained InGaAs/InGaAsP MQW lasers 应变InGaAs/InGaAsP MQW激光器的高速运行
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763623
T. Odagawa, K. Nakajima, K. Tanaka, T. Inoue, N. Okazaki, K. Wakao
{"title":"High-speed operation of strained InGaAs/InGaAsP MQW lasers","authors":"T. Odagawa, K. Nakajima, K. Tanaka, T. Inoue, N. Okazaki, K. Wakao","doi":"10.1109/ISLC.1992.763623","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763623","url":null,"abstract":"High-speed operation of InGaAs/InGaAsP strained-layer MQW lasers has been achieved at 70 /spl deg/C under zero-bias condition by optimizing the SCH structure.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114574092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optimization of MQW structure in 630 nm AlGaInP laser diodes for high-temperature operation 630 nm高温AlGaInP激光二极管中MQW结构的优化
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763619
T. Tanaka, H. Yanagisawa, S. Yano, S. Minagawa
{"title":"Optimization of MQW structure in 630 nm AlGaInP laser diodes for high-temperature operation","authors":"T. Tanaka, H. Yanagisawa, S. Yano, S. Minagawa","doi":"10.1109/ISLC.1992.763619","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763619","url":null,"abstract":"In recent years there has been intensive study on shortening the lasing wavelength of AlGaInP laser diodes by introducing a quaternary active layerl or a ternary quantum well (QW) structure. CW operation at the lasing wavelength of 633 nm, which corresponds to that of a He-Ne gas laser, has been attained by adopting a multiquantum well (MQW) structure with very thin QWs. However, the performance at high temperatures was not good enough to allow an operating temperature higher than 50/spl deg/C. This is thought to be caused by significant carrier overflow from the active layer, which tends to increase with shorter lasing wavelength as the bandgap difference between the active layer and the cladding layers becomes smaller. We first evaluate the effect of the number of QWs on the carrier confinement and the high-temperature characteristics, and then use the results to optimize the structure of an MQW made on misoriented substrates.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124509896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal crosstalk in two-dimensional arrays of vertical-cavity surface-emitting diode lasers 垂直腔面发射二极管激光器二维阵列中的热串扰
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763577
M. Osiński, W. Nakwaski
{"title":"Thermal crosstalk in two-dimensional arrays of vertical-cavity surface-emitting diode lasers","authors":"M. Osiński, W. Nakwaski","doi":"10.1109/ISLC.1992.763577","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763577","url":null,"abstract":"Thermal effects in two-dimensional individually addressable and phase-locked arrays of vertical-cavity surface-emitting diode lasers are analyzed for the first time. Severe thermal crosstalk occurs even at relatively low pumping currents. Conditions are identified for negligible-crosstalk configurations.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134119100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non equilibrium effects in quantum well lasers 量子阱激光器中的非平衡效应
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763608
N. Tessler, R. Nagar, G. Eisenstein, S. Chandrasekhar, C. Joiner, A. Dentai, U. Koren, G. Raybon
{"title":"Non equilibrium effects in quantum well lasers","authors":"N. Tessler, R. Nagar, G. Eisenstein, S. Chandrasekhar, C. Joiner, A. Dentai, U. Koren, G. Raybon","doi":"10.1109/ISLC.1992.763608","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763608","url":null,"abstract":"We present a simple technique of measuring the effect of the finite capture time in a laser structure operating at room temperature. Inhomogeneouse gain saturation is observed.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123266423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coherent high power large aperture ring oscillators 相干高功率大孔径环形振荡器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763645
K. Dzurko, D. Scifres, A. Hardy, D. Welch, R. Waarts
{"title":"Coherent high power large aperture ring oscillators","authors":"K. Dzurko, D. Scifres, A. Hardy, D. Welch, R. Waarts","doi":"10.1109/ISLC.1992.763645","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763645","url":null,"abstract":"A large aperture ring laser having a diffraction limited output measuring 0.2/spl deg/ x 0.2/spl deg/ is described. Devices of this design have exhibited low threshold current density and over 500 mW of Spatially coherent single frequency power.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124671194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Control of spontaneous emission in hemispherical microcavity lasers 半球形微腔激光器自发发射的控制
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763578
F. Matinaga, A. Karlsson, T. Suzuki, Y. Kadota, M. Ikeda, Y. Yamamoto
{"title":"Control of spontaneous emission in hemispherical microcavity lasers","authors":"F. Matinaga, A. Karlsson, T. Suzuki, Y. Kadota, M. Ikeda, Y. Yamamoto","doi":"10.1109/ISLC.1992.763578","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763578","url":null,"abstract":"We present results for the modification of spontaneous emission in hemispherical micro-cavity quantum well lasers.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127520615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding Layer InGaAlP熔覆层对GaAs激光器温度特性的显著改善
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763652
K. Itaya, G. Hatakoshi, Y. Nishikawa, M. Okajima
{"title":"Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding Layer","authors":"K. Itaya, G. Hatakoshi, Y. Nishikawa, M. Okajima","doi":"10.1109/ISLC.1992.763652","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763652","url":null,"abstract":"A new GaAs laser diode employing InGaAIP for the cadding layer has been successfully fabricated. A large bandgap difference between the GaAs active and the InGaAIP cladding layer reduced the electron overflow, which drasticaly improved the temperature characteristics.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114510322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser 1.07 /spl μ /m (InAs)/sub 1//(GaAs)/sub 2/短周期超晶格应变量子阱脊波导激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763639
H. Kurakake, T. Uchida, H. Soda, S. Yamazaki
{"title":"1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser","authors":"H. Kurakake, T. Uchida, H. Soda, S. Yamazaki","doi":"10.1109/ISLC.1992.763639","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763639","url":null,"abstract":"High performance ridge waveguide lasers with (InAs)/sub 1//(GaAS)/sub 2/ short period superlattice (SPS) active layer have been fabricated. A characteristic temperature of 156K is obtained at 1.07 /spl mu/m wavelength.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123375966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Channel guide InGaAs-GaAs-InGaP strained quantum well lasers on P-type GaAs substrate for high power operation 用于高功率工作的p型GaAs衬底的通道波导InGaAs-GaAs-InGaP应变量子阱激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763566
Y. Sin, H. Horikawa, T. Kamijoh
{"title":"Channel guide InGaAs-GaAs-InGaP strained quantum well lasers on P-type GaAs substrate for high power operation","authors":"Y. Sin, H. Horikawa, T. Kamijoh","doi":"10.1109/ISLC.1992.763566","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763566","url":null,"abstract":"Channel guide lasers are, for the first time, demonstrated with ln/sub 0.18/Ga/sub 0.82/As-GaAs-In/sub 0.49/Ga/sub 0.51/P strained quantum well heterostructure on p-type GaAs substrate (/spl lambda/L= 980nm). The uncoated lasers show CW laser thresholds of 12mA at RT and high output powers of 125mW.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114367595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sub-picosecond gain dynamics in InGaAsP MQW laser amplifiers InGaAsP MQW激光放大器的亚皮秒增益动态
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763609
J. Mark, J. Mørk, C. P. Seltzer
{"title":"Sub-picosecond gain dynamics in InGaAsP MQW laser amplifiers","authors":"J. Mark, J. Mørk, C. P. Seltzer","doi":"10.1109/ISLC.1992.763609","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763609","url":null,"abstract":"We report on measurements and calculations of sub-picosecond gain dynamics in InGaAsP MQW laser amplifiers showing the influence of carrier heating, spectral holeburning and two-photon absorption.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131395125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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