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Crossed-gratings for semiconductor lasers 半导体激光器用交叉光栅
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763643
G. Evans, J. Kirk, J. Hammer, N. Carlson, C. Kaiser, S. Liew, J. Butler, D. Bour, W. Reichert, J. Abeles, P. York
{"title":"Crossed-gratings for semiconductor lasers","authors":"G. Evans, J. Kirk, J. Hammer, N. Carlson, C. Kaiser, S. Liew, J. Butler, D. Bour, W. Reichert, J. Abeles, P. York","doi":"10.1109/ISLC.1992.763643","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763643","url":null,"abstract":"Crossed gratings provide a functional effective period, shorter than the exposed grating periods. They can simultaneously provide feedback, outcoupling, and in-plane coupling of monolithic laser elements. Potential applications include OEIC architectures.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130639876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fast (300 ps) polarization insensitive semiconductor optical amplifier switch with low driving current (70 mA) 低驱动电流(70 mA)的快速(300 ps)偏振不敏感半导体光放大器开关
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763606
B. Fernier, P. Brosson, D. Bayart, P. Doussiere, R. Beaumont, F. Leblond, P. Morin, G. Da Loura, J. Jacquet, E. Derouin, P. Garabédian
{"title":"Fast (300 ps) polarization insensitive semiconductor optical amplifier switch with low driving current (70 mA)","authors":"B. Fernier, P. Brosson, D. Bayart, P. Doussiere, R. Beaumont, F. Leblond, P. Morin, G. Da Loura, J. Jacquet, E. Derouin, P. Garabédian","doi":"10.1109/ISLC.1992.763606","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763606","url":null,"abstract":"Switching characteristics (300ps) of polarization insensitive (<0.3dB) Tapered Semiconductor OFtical Amplifiers with 20 dB fiber to fiber gain and //sup +/sub -//0.2 dB gain ripple are investigated as a function of input power and wavelength.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132102823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Low stress and low dislocation density AlGaAs/GaAs laser diodes fabricated on Si substrates 在Si衬底上制备低应力和低位错密度AlGaAs/GaAs激光二极管
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763568
N. Wada, S. Yosfumi, S. Sakai, M. Fukui
{"title":"Low stress and low dislocation density AlGaAs/GaAs laser diodes fabricated on Si substrates","authors":"N. Wada, S. Yosfumi, S. Sakai, M. Fukui","doi":"10.1109/ISLC.1992.763568","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763568","url":null,"abstract":"AlGaAs/GaAs double-hetero-structure laser diodes utilizing the UCGAS (undercut GaAs on Si) which had very low dark spot density and the thermal stress have been fabricated. The diodes lased successfully under pulsed condition at room temperature.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133787979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ordered and disordered GalnP/AlGalnP Strained Layer Quantum Well Visible-Light Emitting Laser Diodes 有序和无序GalnP/AlGalnP应变层量子阱可见发光激光二极管
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763628
C. van der Poel, A. Valster, M. Finke, M. Boermans
{"title":"Ordered and disordered GalnP/AlGalnP Strained Layer Quantum Well Visible-Light Emitting Laser Diodes","authors":"C. van der Poel, A. Valster, M. Finke, M. Boermans","doi":"10.1109/ISLC.1992.763628","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763628","url":null,"abstract":"GalnP/AIGalnP visible light emitting laser diodes arc of great interest. for use in high-density Optical Data Storage and laser printing. Low electrical power consumption and reliable high optical power output at a wavelength of /spl lambda = 675nm are a prerequisite for these applications.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131020385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Strain-induced effects on the performance of AlGalnP Visible Lasers 应变对alalnp可见激光器性能的影响
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763627
J. Hashimoto, T. Katsuyama, J. Shinkai, I. Yoshida, H. Hayashi
{"title":"Strain-induced effects on the performance of AlGalnP Visible Lasers","authors":"J. Hashimoto, T. Katsuyama, J. Shinkai, I. Yoshida, H. Hayashi","doi":"10.1109/ISLC.1992.763627","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763627","url":null,"abstract":"We investigated strain-induced effects on the lasing condition of a strained AlGalnP laser in comparison with an unstrained device having similar band structure. Clear reduction in the threshold current density was observed by incorporating the strained quantum well structure.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115395831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Linewidth, tunability and FM response of strongly-coupled strained-MW three-electrode DFB lasers 强耦合应变-毫瓦三电极DFB激光器的线宽、可调谐性和调频响应
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763582
P. Correc, J. Charil, A. Ougazzaden, I. de Faria, B. Pienre, J. Bouley
{"title":"Linewidth, tunability and FM response of strongly-coupled strained-MW three-electrode DFB lasers","authors":"P. Correc, J. Charil, A. Ougazzaden, I. de Faria, B. Pienre, J. Bouley","doi":"10.1109/ISLC.1992.763582","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763582","url":null,"abstract":"We report improved performance of three-electrode SMQW-DFB lasers with strong coupling (KL=6-9). By proper current tailoring, blue wavelength shift has been theoretically predicted and, for the first time, experimentally observed.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124303806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy 气源分子束外延生长InGaAs/GaAs/GaInP量子阱激光器的特性
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763569
G. Zhang, A. Outchinnikov, J. Nappi, H. Asonen, M. Pessa
{"title":"Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy","authors":"G. Zhang, A. Outchinnikov, J. Nappi, H. Asonen, M. Pessa","doi":"10.1109/ISLC.1992.763569","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763569","url":null,"abstract":"Strained-layer InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy (GSMBE) are reported. The characteristics of these lasers are comparable to those of the best results of InGaAs/GaAs/AlGaAs lasers.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"286 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122918673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Observation of frequency doubling in monolithic mode-locked lasers 单片锁模激光器中倍频现象的观察
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763595
T. Miyazawa, A. Wakatsuki, H. lwamura
{"title":"Observation of frequency doubling in monolithic mode-locked lasers","authors":"T. Miyazawa, A. Wakatsuki, H. lwamura","doi":"10.1109/ISLC.1992.763595","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763595","url":null,"abstract":"Optical pulses, of which repetition rates are double that of modulation frequencies, were observed from novel monolithic mode-locked semiconductor lasers. Suppression of the fundamental component in gain modulation and enhanced second-harmonics is the origin of these double-frequency pulses.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125107199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Transient carrier responses in multiple quantum well lasers 多量子阱激光器中的瞬态载流子响应
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763563
N. Tessler, G. Eisenstein
{"title":"Transient carrier responses in multiple quantum well lasers","authors":"N. Tessler, G. Eisenstein","doi":"10.1109/ISLC.1992.763563","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763563","url":null,"abstract":"We model transient response of injected carriers in quantum well lasers. We describe carrier dynamics resulting from transport along confinement regions, injection bottleneck into the wells and mutual interactions between electrons and holes.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128406614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Three-mode coupling and intensity noise in nearly single-mode semiconductor lasers 近单模半导体激光器中的三模耦合与强噪声
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763659
W. Sharfin, J. Schlafer, E. Koteles, G.J. Meslener
{"title":"Three-mode coupling and intensity noise in nearly single-mode semiconductor lasers","authors":"W. Sharfin, J. Schlafer, E. Koteles, G.J. Meslener","doi":"10.1109/ISLC.1992.763659","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763659","url":null,"abstract":"For the first time, the beat spectra between adjacent modes of a nearly single-mode semiconductor laser are measured. Self-locking processes are observed, indicating the importarce of three-mode interactions. Measurements of the laser linewidth and relative intensity noise are also presented.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122161853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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