应变对alalnp可见激光器性能的影响

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763627

J. Hashimoto, T. Katsuyama, J. Shinkai, I. Yoshida, H. Hayashi

{"title":"应变对alalnp可见激光器性能的影响","authors":"J. Hashimoto, T. Katsuyama, J. Shinkai, I. Yoshida, H. Hayashi","doi":"10.1109/ISLC.1992.763627","DOIUrl":null,"url":null,"abstract":"We investigated strain-induced effects on the lasing condition of a strained AlGalnP laser in comparison with an unstrained device having similar band structure. Clear reduction in the threshold current density was observed by incorporating the strained quantum well structure.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Strain-induced effects on the performance of AlGalnP Visible Lasers\",\"authors\":\"J. Hashimoto, T. Katsuyama, J. Shinkai, I. Yoshida, H. Hayashi\",\"doi\":\"10.1109/ISLC.1992.763627\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated strain-induced effects on the lasing condition of a strained AlGalnP laser in comparison with an unstrained device having similar band structure. Clear reduction in the threshold current density was observed by incorporating the strained quantum well structure.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"127 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763627\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763627","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们研究了应变对应变alalnp激光器激光条件的影响，并与具有相似能带结构的非应变alalnp激光器进行了比较。通过结合应变量子阱结构，观察到阈值电流密度明显降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Strain-induced effects on the performance of AlGalnP Visible Lasers

We investigated strain-induced effects on the lasing condition of a strained AlGalnP laser in comparison with an unstrained device having similar band structure. Clear reduction in the threshold current density was observed by incorporating the strained quantum well structure.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

13th IEEE International Semiconductor Laser Conference

自引率

0.00%

发文量