G. Zhang, A. Outchinnikov, J. Nappi, H. Asonen, M. Pessa
{"title":"气源分子束外延生长InGaAs/GaAs/GaInP量子阱激光器的特性","authors":"G. Zhang, A. Outchinnikov, J. Nappi, H. Asonen, M. Pessa","doi":"10.1109/ISLC.1992.763569","DOIUrl":null,"url":null,"abstract":"Strained-layer InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy (GSMBE) are reported. The characteristics of these lasers are comparable to those of the best results of InGaAs/GaAs/AlGaAs lasers.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"286 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy\",\"authors\":\"G. Zhang, A. Outchinnikov, J. Nappi, H. Asonen, M. Pessa\",\"doi\":\"10.1109/ISLC.1992.763569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Strained-layer InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy (GSMBE) are reported. The characteristics of these lasers are comparable to those of the best results of InGaAs/GaAs/AlGaAs lasers.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"286 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characteristics of InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy
Strained-layer InGaAs/GaAs/GaInP quantum well lasers grown by gas-source molecular-beam epitaxy (GSMBE) are reported. The characteristics of these lasers are comparable to those of the best results of InGaAs/GaAs/AlGaAs lasers.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
