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High power operation of small beam astigmatism AlGaInP self-aligned bend waveguide laser diode 小光束像散AlGaInP自对准弯曲波导激光二极管的高功率工作
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763587
A. Furuya, Y. Kito, T. Fukushima, M. Sugano, H. Sudo, C. Anayama, M. Kondo, T. Tanahashi
{"title":"High power operation of small beam astigmatism AlGaInP self-aligned bend waveguide laser diode","authors":"A. Furuya, Y. Kito, T. Fukushima, M. Sugano, H. Sudo, C. Anayama, M. Kondo, T. Tanahashi","doi":"10.1109/ISLC.1992.763587","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763587","url":null,"abstract":"Kink free high power operation of 40 mW was attained in a very small beam astigmatism AlGalnP self-aligned bend waveguide laser diode by optimization of active layer thickness and stripe width.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"187 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115725866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-power CW distributed out-coupled grating surface emitting laser-amplifiers with narrow spectra and high-quality beams 具有窄光谱高质量光束的大功率连续波分布式外耦合光栅面发射激光放大器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763580
J. Abeles, P. York, N. Carlson, J. Andrews, W. Reichert, J. Kirk, N. Hughes, S. Liew, J. Connolly, G. Evans, J. Butler
{"title":"High-power CW distributed out-coupled grating surface emitting laser-amplifiers with narrow spectra and high-quality beams","authors":"J. Abeles, P. York, N. Carlson, J. Andrews, W. Reichert, J. Kirk, N. Hughes, S. Liew, J. Connolly, G. Evans, J. Butler","doi":"10.1109/ISLC.1992.763580","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763580","url":null,"abstract":"We report emission of a 100 mM cw beam into a nearly-diffraction-limited spot by a grating surface emitting (GSE) laser. The distributed out-coupled master oscillator power amplifier (DOC-MOPA) produces monochromatic (933 nm) narrow linewidth (10 MHz) beams and near-ideal far-field patterns. Single wavelength operation is demonstrated to 260 mW cw.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115972554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Low threshold, high power, single mode 630 nm lasers 低阈值，高功率，单模630纳米激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763617
R. Geels, D. Welch, D. Scifres, D. Bour, D. W. Treat, R. Bringans
{"title":"Low threshold, high power, single mode 630 nm lasers","authors":"R. Geels, D. Welch, D. Scifres, D. Bour, D. W. Treat, R. Bringans","doi":"10.1109/ISLC.1992.763617","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763617","url":null,"abstract":"We report output powers exceeding 45 mW, under CW, room temperature operation from single mode AlGaInP visible lasers emitting at 636 run. Threshold currents as low as 30 mA and single mode output powers of 40 mW have been obtained.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115833802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High speed ultra-low chirp 1.55/spl mu/m GaInAs/AlGaInAs MQW BRS DFB lasers 高速超低啁啾1.55/spl μ m GaInAs/AlGaInAs MQW BRS DFB激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763622
M. Blez, C. Kazmierski, D. Mathoorasing, M. Quillec, M. Gilleron, J. Landreau, H. Nakajima
{"title":"High speed ultra-low chirp 1.55/spl mu/m GaInAs/AlGaInAs MQW BRS DFB lasers","authors":"M. Blez, C. Kazmierski, D. Mathoorasing, M. Quillec, M. Gilleron, J. Landreau, H. Nakajima","doi":"10.1109/ISLC.1992.763622","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763622","url":null,"abstract":"We report chirp values reduced to the information bandwidth (0.1 nm) on 10 Gb1s operating InGaAslInGaAbAs MQW DFB lasers. A very low linewidth enhancementfactor of 1.8 was estimated above threshold by injection locking methods.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124421640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Large dynamic range CW single mode top surface-emitting laser with small window 大动态范围连续波单模小窗口顶面发射激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763640
G. Du, F. Zhao, Xiaobo Zhang, D. Gao, J. Lin, J.K. Gamelin, B. Wu, S. Wang, M. Hong, J. Mannaerts
{"title":"Large dynamic range CW single mode top surface-emitting laser with small window","authors":"G. Du, F. Zhao, Xiaobo Zhang, D. Gao, J. Lin, J.K. Gamelin, B. Wu, S. Wang, M. Hong, J. Mannaerts","doi":"10.1109/ISLC.1992.763640","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763640","url":null,"abstract":"We report the results of a room temperature CW top surface-emitting laser whose light emitting window is much smaller than the current injection area. It maintains single mode at 7 times the threshold current.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116835828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nearly degenerate four wave mixing in DFB lasers DFB激光器中的近简并四波混频
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763598
A. Mecozzi, P. Spano, A. D'Ottavi, R. Hui
{"title":"Nearly degenerate four wave mixing in DFB lasers","authors":"A. Mecozzi, P. Spano, A. D'Ottavi, R. Hui","doi":"10.1109/ISLC.1992.763598","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763598","url":null,"abstract":"Degenerate Four Wave Mixing (DFWM) and Nearly Degenerate Four Wave Mixing (NDFWM) have attracted a considerable attention in non-linear optics. DFWM has found several applications in phase conjugation, used in real time holography and adaptive optics. To realize a higher amplification of the conjugate wave, semiconductor amplifiers have been used. A theoretical analysis of the NDFWM process has been presented by Agrawal [1]. Here, an experimental and theoretical analysis of NDFWM in Distributed Feedback (DFB) lasers is proposed, where the FWM efficiency is enhanced by the cavity feedback mechanism.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122797589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Barrier thickness dependence of waveguide loss for compressively strained MQW-BH lasers operating at 1.48/spl mu/m 工作在1.48/spl μ m的压缩应变MQW-BH激光器波导损耗的势垒厚度依赖性
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763567
S. Tsuji, R. Suzuki, Y. Tsuchiya, T. Taniwatari, Y. Ono
{"title":"Barrier thickness dependence of waveguide loss for compressively strained MQW-BH lasers operating at 1.48/spl mu/m","authors":"S. Tsuji, R. Suzuki, Y. Tsuchiya, T. Taniwatari, Y. Ono","doi":"10.1109/ISLC.1992.763567","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763567","url":null,"abstract":"Barrier thickness dependence of the waveguide loss for compressive strained MQW waveguides is investigated experimentally. The waveguide loss is found to be greatly decreased in thin (6nm) barrier, compressively strained MQW-BH lasers.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129973369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs) InGaAs/AlGaAs应变层量子阱激光器(SL-QWLs)增益饱和系数的理论分析
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763562
S. Seki, P. Sotirelis, K. Hess
{"title":"Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)","authors":"S. Seki, P. Sotirelis, K. Hess","doi":"10.1109/ISLC.1992.763562","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763562","url":null,"abstract":"The gain saturation coefficient c in InGaAsIAIGaAs strained layer quantum well lasers is the oretically analyzed by taking into account the effect of strain on the intra-su&band relaxation time. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to an increase of the intra-subband relaxation time.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121165388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
1.55/spl mu/m multi-quantum-well lasers with record performance obtained by atmospheric pressure MOVPE using an organometallic phosphorous precursor bis(phosphinoethane) 利用有机金属磷前驱体二(膦乙烷)常压MOVPE获得1.55/spl μ l /m多量子阱激光器，并取得了创纪录的性能
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763648
A. Ougazzaden, A. Mircea, R. Mellet, G. Primot, C. Kazmierski
{"title":"1.55/spl mu/m multi-quantum-well lasers with record performance obtained by atmospheric pressure MOVPE using an organometallic phosphorous precursor bis(phosphinoethane)","authors":"A. Ougazzaden, A. Mircea, R. Mellet, G. Primot, C. Kazmierski","doi":"10.1109/ISLC.1992.763648","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763648","url":null,"abstract":"The recently available precursor bisphosphinoethane (BPE) was used, alongside with phosphine and with tertbutylphosphine (TBP), to grow advanced multi-quantum-well (MQW) laser wafers with five quaternary, compressive strained wells. The lowest threshold current densities and the lowest optical losses were obtained with BPE. In particular, the lowest threshold current density - 328 A/cm/spl 2/ - is a record among published values for lasers with 5 wells. In this comparison, the wafer grown with phosphine came a close second and the one with TBP was third.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"354 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126689429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cross-correlation measurements of intensity noise from the two facets of DFB lasers during linewidth rebroadening 线宽再展宽过程中DFB激光器两个侧面强度噪声的互相关测量
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763665
E. Goobar, P. Rigole, R. Schatz
{"title":"Cross-correlation measurements of intensity noise from the two facets of DFB lasers during linewidth rebroadening","authors":"E. Goobar, P. Rigole, R. Schatz","doi":"10.1109/ISLC.1992.763665","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763665","url":null,"abstract":"A method to experimentally verify the importance of non-symmetrical fluctuations of the longitudinal intensity distribution as a cause to linewidth rebroadening is proposed and tested on several DFB lasers. This is based on the measurement of cross correlation between the intensity noise from the two laser facets. Our results indicate that such fluctua tions, probably due to weak side mode suppression, can play an important roll in linewidth rebroadening. Linewidth floors were observed at high output powers without any noticeable cross-correlation.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126182651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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