R. Geels, D. Welch, D. Scifres, D. Bour, D. W. Treat, R. Bringans
{"title":"Low threshold, high power, single mode 630 nm lasers","authors":"R. Geels, D. Welch, D. Scifres, D. Bour, D. W. Treat, R. Bringans","doi":"10.1109/ISLC.1992.763617","DOIUrl":null,"url":null,"abstract":"We report output powers exceeding 45 mW, under CW, room temperature operation from single mode AlGaInP visible lasers emitting at 636 run. Threshold currents as low as 30 mA and single mode output powers of 40 mW have been obtained.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763617","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We report output powers exceeding 45 mW, under CW, room temperature operation from single mode AlGaInP visible lasers emitting at 636 run. Threshold currents as low as 30 mA and single mode output powers of 40 mW have been obtained.