Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)

Abstract

The gain saturation coefficient c in InGaAsIAIGaAs strained layer quantum well lasers is the oretically analyzed by taking into account the effect of strain on the intra-su&band relaxation time. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to an increase of the intra-subband relaxation time.