1.55/spl mu/m multi-quantum-well lasers with record performance obtained by atmospheric pressure MOVPE using an organometallic phosphorous precursor bis(phosphinoethane)

Abstract

The recently available precursor bisphosphinoethane (BPE) was used, alongside with phosphine and with tertbutylphosphine (TBP), to grow advanced multi-quantum-well (MQW) laser wafers with five quaternary, compressive strained wells. The lowest threshold current densities and the lowest optical losses were obtained with BPE. In particular, the lowest threshold current density - 328 A/cm/spl 2/ - is a record among published values for lasers with 5 wells. In this comparison, the wafer grown with phosphine came a close second and the one with TBP was third.