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Very low threshold current operation of semiconductor ring lasers 半导体环形激光器的极低阈值电流操作
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763574
T. Krauss, P.J.R. Layboum
{"title":"Very low threshold current operation of semiconductor ring lasers","authors":"T. Krauss, P.J.R. Layboum","doi":"10.1109/ISLC.1992.763574","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763574","url":null,"abstract":"Semiconductor ring lasers with a threshold current as low as 12.5mA have been fabricated in GaAs/AlGaAs. The excess bending loss is calculated to 3dB/360/spl deg/ and found to be independent of the radius between 30p/spl mu/ and 145/spl mu/m. Kinks in the L-1 curve are explained by temperature-induced shifts of the mode position.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121887751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
An experimental and theoretical analysis of the influence of compressive strain on 1.5 /spl mu/m quantum well lasers 压缩应变对1.5 /spl mu/m量子阱激光器影响的实验和理论分析
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763555
A. Adams, V. A. Wilkinson, J. Braithwaite, M. Silver, E. O’Reilly
{"title":"An experimental and theoretical analysis of the influence of compressive strain on 1.5 /spl mu/m quantum well lasers","authors":"A. Adams, V. A. Wilkinson, J. Braithwaite, M. Silver, E. O’Reilly","doi":"10.1109/ISLC.1992.763555","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763555","url":null,"abstract":"Lasers containing compressively strained quantum wells show reduced threshold current, intervalence band absorption, Auger recombination coefficient and in-plane hole mass. The measured values of these parameters account accurately for the observed device temperature sensitivity.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122339855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Carrier confinement and its effect on the internal quantum efficiency and modulation response of quantum well lasers 载流子约束及其对量子阱激光器内量子效率和调制响应的影响
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763610
R. Nagarajan, R. Mirin, T. Reynolds, J. Bowers
{"title":"Carrier confinement and its effect on the internal quantum efficiency and modulation response of quantum well lasers","authors":"R. Nagarajan, R. Mirin, T. Reynolds, J. Bowers","doi":"10.1109/ISLC.1992.763610","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763610","url":null,"abstract":"Recently it was shown that carrier transport can have a significant effect on the modulation response and relative intensity noise of quantum well lasers. We showed that carrier transport across wide undoped separate confinement heterostructure (SCH) regions leads to a severe low frequency rolloff in the modulation response, in addition to a reduction in the effective differential gain. Analytic expressions for the modulation response, resonance frequency and damping were also derived which showed that the differential gain, go, is reduced to go//spl chi/. The transport factor, /spl chi/, is given by (1+/spl tau//sub r///spl tau//sub e/ where /spl tau//sub r/, is the carrier transport time across the SCH and /spl tau//sub e/, is the themioaic emission time out of the quantum well. The rolloff frequency is given by /spl tilde/ 1/2/spl pi/spl tau//sub r/.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122400105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Unique top-driven lasers having record-high performance by Self-Aligned Si-Zn Diffusion 独特的顶部驱动激光器具有创纪录的高性能自对准硅锌扩散
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763653
W. Zou, K. Law, J. Merz
{"title":"Unique top-driven lasers having record-high performance by Self-Aligned Si-Zn Diffusion","authors":"W. Zou, K. Law, J. Merz","doi":"10.1109/ISLC.1992.763653","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763653","url":null,"abstract":"Planar top-driven lasers with vertical carrier injection have been fabricated by self-aligned Si-Zn diffusion. The lasers have threshold current as low as 2.0 mA and light output as high as 19 mW per facet at RT CW operation.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124921128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
6 THz Range Frequency Conversion of 2.5 Gbit/s Signals by a 1.55 /spl mu/m MQW Based Widely Tunable Y-Laser 基于1.55 /spl mu/m MQW的宽可调谐y型激光器对2.5 Gbit/s信号的6thz范围频率转换
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763668
M. Schilling, W. Idler, D. Baums, K. Dutting, G. Laube, K. Wunstel, O. Hildebrand
{"title":"6 THz Range Frequency Conversion of 2.5 Gbit/s Signals by a 1.55 /spl mu/m MQW Based Widely Tunable Y-Laser","authors":"M. Schilling, W. Idler, D. Baums, K. Dutting, G. Laube, K. Wunstel, O. Hildebrand","doi":"10.1109/ISLC.1992.763668","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763668","url":null,"abstract":"For the interferometric Y-laser we report on extended electrical cw tuning per formance of 51 nm, low dc threshold currents of 8 mA per segment, and up to 6 THz tunable frequency conversion of 2-5 Gb/s data. Moreover, a new simplified current control scheme allowing for improved tuning response is proposed and verified with first samples.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124989035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
High temperature (74/spl deg/c) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier 利用多量子势垒的634 nm InGaAlP激光二极管的高温(74/spl℃)连续工作
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763618
J. Rennie, M. Okajima, M. Watanabe, G. Hatakoshi
{"title":"High temperature (74/spl deg/c) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier","authors":"J. Rennie, M. Okajima, M. Watanabe, G. Hatakoshi","doi":"10.1109/ISLC.1992.763618","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763618","url":null,"abstract":"The InGaAlP semiconductor system has been employed to develop highly efficient visible light emitting lasers in the wavelength range 6501x11 to 690nm. Hawever, the advantages of even shorter wavelengths, in the areas of optical recording and printing media, has led to investigations into such. structures as the multiple quantum well (MQW). The major aim being tcl produce a laser emitting at the same wavelength as the HeNe gas laser, i.e. 633nm. However, most of the lasers so far developed have had very lmr maximum operating temperatures with large threshold currents, due to the increasing problem of carrier overflm from the active to cladding regions of the lasers. Due to this, the maximum operating temperatures of these devices have been limited to under 50'C (1, 2 ) . Although, some progress has been made in reducing the threshold currents ( 3 ) , the problem of poor temperature characteristics remains.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130476247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Gain-coupled long wavelength InGaAsP/InP distributed feedback lasers with quantum well gratings grown by chemical beam epitaxy 化学束外延生长具有量子阱光栅的增益耦合长波InGaAsP/InP分布反馈激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763549
W. Tsang, F. Choa, M. Wu, Y. Chen, R. Logan, T. Tanbun-ek, S. Chu, A. Sergent, P. Magi, K. Reichmann, C. Burrus
{"title":"Gain-coupled long wavelength InGaAsP/InP distributed feedback lasers with quantum well gratings grown by chemical beam epitaxy","authors":"W. Tsang, F. Choa, M. Wu, Y. Chen, R. Logan, T. Tanbun-ek, S. Chu, A. Sergent, P. Magi, K. Reichmann, C. Burrus","doi":"10.1109/ISLC.1992.763549","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763549","url":null,"abstract":"We report a gain-coupled DFB laser grown by chemical beam epitaxy with a quantum well loss grating structure. Device performances with some preliminary system experiment results are included.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124480317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Vertical cavity surface emitting lasers for integrated optoelectronics 集成光电子学用垂直腔面发射激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763547
L. Coldren
{"title":"Vertical cavity surface emitting lasers for integrated optoelectronics","authors":"L. Coldren","doi":"10.1109/ISLC.1992.763547","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763547","url":null,"abstract":"Within the past two years vertical-cavity surface-emitting lasers (VCSELs) have transitioned from being the subject of exploratory research in a few scattered groups around the world to the focus of serious development efforts in numerous major corporations. In fact, the turning point seemed to occur about two years ago--perhaps due in part to the important talks and discussions at the last Semiconductor Laser Conference in Davos[I-61. At that time the 'main-stream' diode laser worker harbored many doubts about the viability of this new device. The modest performance that then existed was seen by many as indicative of what could be expected. Needless to say, we now know that VCSELs have emerged as completely viable sources, which might even fulfill the outlandish predictions made at Davos that VCSELs would be the dominate diode laser by the turn of the century. Although their performance still falls short of in-plane devices, theoretical models predict that significant improvements should be soon forthcoming. Moreover, the inherent advantages of wafer-scale manufacturability and testability as well as efficient coupling to fibers or other low numerical aperture optics suggests that many niches for VCSELs will emerge.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121038546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Polarization dependent a-factor in InGaAs/InGaAsP MQW material InGaAs/InGaAsP MQW材料中偏振相关的a因子
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763572
M. Soerensen, N. Storkfelt, K. Jepsen, B. Mikkelsen, K. Stubkjaer
{"title":"Polarization dependent a-factor in InGaAs/InGaAsP MQW material","authors":"M. Soerensen, N. Storkfelt, K. Jepsen, B. Mikkelsen, K. Stubkjaer","doi":"10.1109/ISLC.1992.763572","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763572","url":null,"abstract":"Multiple Quantum Well (MQW) structures are of high interest for many types of op tical devices because of the improved performance. Material parameters such as the linewidth enhancement factor (or-factor) [1] and the related differential gain (dg/dN) and differential refractive index (dn/dN) are essential in the design of lasers and optical amplifiers, because they govern important properties as linewidth, frequency response and resonance frequency. So far, most of the characterization has been carried out for the TE-polarization, but the polarization dependence of these parameters is important to the optimization of the MQW structures. Here we present measurements of the polarization dependence of dn/dN, dg/dN and the or-factor in a MQW amplifier. Theoretical results are also presented and reasonable agreement with measured data is obtained.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121264457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Tunable DBR Laser for Wavelength Conversion of 2.5 Gbit/s Signals 用于2.5 Gbit/s信号波长转换的可调谐DBR激光器
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763667
R. J. Pedersen, Skullerud, B. Mikkelsen, Torsten Djurhuus, M. J. Steinmann, Stubkjær Kristian, M. Öberg, S. Nilsson
{"title":"Tunable DBR Laser for Wavelength Conversion of 2.5 Gbit/s Signals","authors":"R. J. Pedersen, Skullerud, B. Mikkelsen, Torsten Djurhuus, M. J. Steinmann, Stubkjær Kristian, M. Öberg, S. Nilsson","doi":"10.1109/ISLC.1992.763667","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763667","url":null,"abstract":"Demonstration of wavelength conversion of 2.5 Gbit/s signals using a tunable DBR laser as the wavelength converting element. This is to the authors' knowledge the highest bitrate used in a wavelength conversion transmission experiment. We present penalty free conversion by more than 15 nm and a signal chip-gain of 13 dB.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122518063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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