发布求助
文献互助 智能选刊 最新文献

13th IEEE International Semiconductor Laser Conference最新文献

筛选
英文 中文
Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region 具有InGaAs/InP MQW饱和吸收区的侧注光控制双稳激光二极管
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763607
K. Nonaka, H. Tsuda, T. Kurokawa, H. Uenohara, H. lwamura
{"title":"Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region","authors":"K. Nonaka, H. Tsuda, T. Kurokawa, H. Uenohara, H. lwamura","doi":"10.1109/ISLC.1992.763607","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763607","url":null,"abstract":"A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output ( over 30 dB) are observed.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"62 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120880757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High temperature and high power operation of mode stabilized GaInP/AlGaInP Strained MQW Lasers 模式稳定GaInP/AlGaInP应变MQW激光器的高温高功率工作
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763630
M. Mannoh, S. Kamiyama, J. Hoshina, I. Kidoguchi, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka
{"title":"High temperature and high power operation of mode stabilized GaInP/AlGaInP Strained MQW Lasers","authors":"M. Mannoh, S. Kamiyama, J. Hoshina, I. Kidoguchi, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka","doi":"10.1109/ISLC.1992.763630","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763630","url":null,"abstract":"We report, for the first time, on high temperature and high power operation (50mW up to 100/spl deg/C) of transverse-mode stabilized 677nm AlGalnP visible lasers employing compressive strained multiquantum well (MQW) active layer.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"52 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120924935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Comparison of vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW Diode Lasers Designed for Monolithic Integration 垂直紧凑高速GaAs和In/sub 0.35/Ga/sub 0.65/As单片集成MQW激光器的比较
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763626
J. Ralston, S. Weisser, I. Esquivias, D. Gallagher, P. Tasker, J. Rosenzweig, J. Fleissner
{"title":"Comparison of vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW Diode Lasers Designed for Monolithic Integration","authors":"J. Ralston, S. Weisser, I. Esquivias, D. Gallagher, P. Tasker, J. Rosenzweig, J. Fleissner","doi":"10.1109/ISLC.1992.763626","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763626","url":null,"abstract":"A detailed comparison is presented between vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW's with pseudomorphic InGaAs QW's are clearly demonstrated.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116480912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimum asymmetric mirror facets structure for high efficiency semiconductor lasers 高效半导体激光器的最佳非对称镜面结构
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763564
T. Higashi, S. Ogita, H. Soda, H. Kobayashi, H. Kurakake, O. Aoki, J. Okazaki
{"title":"Optimum asymmetric mirror facets structure for high efficiency semiconductor lasers","authors":"T. Higashi, S. Ogita, H. Soda, H. Kobayashi, H. Kurakake, O. Aoki, J. Okazaki","doi":"10.1109/ISLC.1992.763564","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763564","url":null,"abstract":"","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129808175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Coherence and spectral linewidth properties of active grating-coupled, surface-emitting amplified lasers 有源光栅耦合、表面发射放大激光器的相干性和谱线宽度特性
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763579
N. Carlson, S. Liew, R. Amantea, P. Gardner, R. Menna, E. Vangieson, J. Abeles, G. Evans
{"title":"Coherence and spectral linewidth properties of active grating-coupled, surface-emitting amplified lasers","authors":"N. Carlson, S. Liew, R. Amantea, P. Gardner, R. Menna, E. Vangieson, J. Abeles, G. Evans","doi":"10.1109/ISLC.1992.763579","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763579","url":null,"abstract":"We present an experimental and theoretical study of the spatial dependence of the spectral linewidth of active grating-coupled surface-emitting amplified lasers. Good qualitative agreement between experiment and theory is obtained.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132826622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Theoretical and experimental optimisation of the high speed dynamic performance of 2 x /spl lambda//8 (InGa)(AsP) MQW DFB laser structures 2 x /spl λ //8 (InGa)(AsP) MQW DFB激光器结构高速动态性能的理论和实验优化
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763600
J. Whiteaway, G. Thompson, B. Garrettl, A. Wright, R. Glew, C. Cureton, D. Moule
{"title":"Theoretical and experimental optimisation of the high speed dynamic performance of 2 x /spl lambda//8 (InGa)(AsP) MQW DFB laser structures","authors":"J. Whiteaway, G. Thompson, B. Garrettl, A. Wright, R. Glew, C. Cureton, D. Moule","doi":"10.1109/ISLC.1992.763600","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763600","url":null,"abstract":"The high speed response of MQW DFB lasers has been optimised using a detailed dynamic model that for the first time includes both longitudinal hole burning and carrier transport effects. The experimental FSK chirp has been reduced by a factor of 5.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132578828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis on fm efficiency of InGaAs/InGaAsP SCH-MQW LDs Taking Injection Carrier Transport into Account 考虑注入载流子输运的InGaAs/InGaAsP SCH-MQW ld调频效率分析
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763625
H. Yamazaki, M. Yamaguchi, M. Kitamura, I. Mito
{"title":"Analysis on fm efficiency of InGaAs/InGaAsP SCH-MQW LDs Taking Injection Carrier Transport into Account","authors":"H. Yamazaki, M. Yamaguchi, M. Kitamura, I. Mito","doi":"10.1109/ISLC.1992.763625","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763625","url":null,"abstract":"Injection carrier transport from SCH layers to wells in SCH-MQW LDs was found to play an important role for FM response. Both of the measured and the calculated results indicate that wide SCH layer is desirable for high FM efficiency operation.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114916737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Measurement of pulse build-up in passively mode-locked laser diodes 被动锁模激光二极管脉冲累积的测量
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763655
N. Stelmakh, D. Pascal, J. Lourtioz
{"title":"Measurement of pulse build-up in passively mode-locked laser diodes","authors":"N. Stelmakh, D. Pascal, J. Lourtioz","doi":"10.1109/ISLC.1992.763655","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763655","url":null,"abstract":"We present a detailed analysis of mode-locking process in a passively mode locked AlGaAs laser emitting pulses as short as /spl tilde/450 fs. Measurements of pulse build-up time, laser gain modulation, pulse duration and group velocity dispersion are reported.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"43 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134289972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultrawide wavelength tuning with single longitudinal mode by Super Structure Grating (SSG) DBR Lasers 超结构光栅(SSG) DBR激光器单纵模超宽波长调谐
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763666
Y. Tohmori, Y. Yoshikuni, T. Tamamura, M. Yamamoto, Y. Kondo, H. Ishii
{"title":"Ultrawide wavelength tuning with single longitudinal mode by Super Structure Grating (SSG) DBR Lasers","authors":"Y. Tohmori, Y. Yoshikuni, T. Tamamura, M. Yamamoto, Y. Kondo, H. Ishii","doi":"10.1109/ISLC.1992.763666","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763666","url":null,"abstract":"Ultrawide tuning was demonstrated in Butt-Joint DBR lasers with super structure grating. Tuning range of 63 nm with keeping SLM under CW was investigated. Threshold current variation in the tuning range of 50 nm was as low as 5.0 - 9.5 mA.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133487980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Application of reactive ion etching using C/sub 2/H/sub 6//H/sub 2/O/sub 2/ to fabricate a 1.48 /spl mu/m lnGaAsP/InP p-substrate buried-heterostructure laser diode C/sub 2/H/sub 6//H/sub 2/O/sub 2/反应离子刻蚀制备1.48 /spl μ m lnGaAsP/InP p衬底埋置异质结构激光二极管
13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI: 10.1109/ISLC.1992.763570
H. Sugimoto, T. Isu, H. Tada, T. Miura, T. Shiba, T. Kimura, A. Takemoto
{"title":"Application of reactive ion etching using C/sub 2/H/sub 6//H/sub 2/O/sub 2/ to fabricate a 1.48 /spl mu/m lnGaAsP/InP p-substrate buried-heterostructure laser diode","authors":"H. Sugimoto, T. Isu, H. Tada, T. Miura, T. Shiba, T. Kimura, A. Takemoto","doi":"10.1109/ISLC.1992.763570","DOIUrl":"https://doi.org/10.1109/ISLC.1992.763570","url":null,"abstract":"Reactive ion etching using C/sub 2/H/sub 6//H/sub 2//O/sub 2/ realized sufficiently smooth etched surface and little side-etching for the fabrication of ridge mesa structures of the commercially produced PPlBH laser diodes. No degradation of the laser characteristics was observed.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"397 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116123277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信