High temperature and high power operation of mode stabilized GaInP/AlGaInP Strained MQW Lasers

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763630

M. Mannoh, S. Kamiyama, J. Hoshina, I. Kidoguchi, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka

引用次数: 9

Abstract

We report, for the first time, on high temperature and high power operation (50mW up to 100/spl deg/C) of transverse-mode stabilized 677nm AlGalnP visible lasers employing compressive strained multiquantum well (MQW) active layer.

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模式稳定GaInP/AlGaInP应变MQW激光器的高温高功率工作

我们首次报道了采用压缩应力多量子阱(MQW)有源层的横向模稳定677nm AlGalnP可见激光器的高温和高功率工作(50mW高达100/spl℃)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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