Comparison of vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW Diode Lasers Designed for Monolithic Integration

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763626

J. Ralston, S. Weisser, I. Esquivias, D. Gallagher, P. Tasker, J. Rosenzweig, J. Fleissner

引用次数: 0

Abstract

A detailed comparison is presented between vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW's with pseudomorphic InGaAs QW's are clearly demonstrated.

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垂直紧凑高速GaAs和In/sub 0.35/Ga/sub 0.65/As单片集成MQW激光器的比较

比较了垂直紧凑型高速GaAs和适合与MODFET驱动电路集成的In/sub 0.35/Ga/sub 0.65/As MQW二极管激光器结构。尽管用假晶InGaAs QW取代GaAs QW的优势被清楚地展示出来，但这两种器件都表现出了卓越的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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13th IEEE International Semiconductor Laser Conference

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