模式稳定GaInP/AlGaInP应变MQW激光器的高温高功率工作

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763630

M. Mannoh, S. Kamiyama, J. Hoshina, I. Kidoguchi, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka

{"title":"模式稳定GaInP/AlGaInP应变MQW激光器的高温高功率工作","authors":"M. Mannoh, S. Kamiyama, J. Hoshina, I. Kidoguchi, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka","doi":"10.1109/ISLC.1992.763630","DOIUrl":null,"url":null,"abstract":"We report, for the first time, on high temperature and high power operation (50mW up to 100/spl deg/C) of transverse-mode stabilized 677nm AlGalnP visible lasers employing compressive strained multiquantum well (MQW) active layer.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"52 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"High temperature and high power operation of mode stabilized GaInP/AlGaInP Strained MQW Lasers\",\"authors\":\"M. Mannoh, S. Kamiyama, J. Hoshina, I. Kidoguchi, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka\",\"doi\":\"10.1109/ISLC.1992.763630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report, for the first time, on high temperature and high power operation (50mW up to 100/spl deg/C) of transverse-mode stabilized 677nm AlGalnP visible lasers employing compressive strained multiquantum well (MQW) active layer.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"52 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763630\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

我们首次报道了采用压缩应力多量子阱(MQW)有源层的横向模稳定677nm AlGalnP可见激光器的高温和高功率工作(50mW高达100/spl℃)。

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High temperature and high power operation of mode stabilized GaInP/AlGaInP Strained MQW Lasers

We report, for the first time, on high temperature and high power operation (50mW up to 100/spl deg/C) of transverse-mode stabilized 677nm AlGalnP visible lasers employing compressive strained multiquantum well (MQW) active layer.

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13th IEEE International Semiconductor Laser Conference

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