Analysis on fm efficiency of InGaAs/InGaAsP SCH-MQW LDs Taking Injection Carrier Transport into Account

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763625

H. Yamazaki, M. Yamaguchi, M. Kitamura, I. Mito

引用次数: 6

Abstract

Injection carrier transport from SCH layers to wells in SCH-MQW LDs was found to play an important role for FM response. Both of the measured and the calculated results indicate that wide SCH layer is desirable for high FM efficiency operation.

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考虑注入载流子输运的InGaAs/InGaAsP SCH-MQW ld调频效率分析

在SCH- mqw油藏中，从SCH层到井的注入载流子输运对调频响应起着重要作用。实测和计算结果均表明，为了实现高调频效率的工作，宽的SCH层是理想的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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