具有InGaAs/InP MQW饱和吸收区的侧注光控制双稳激光二极管

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763607

K. Nonaka, H. Tsuda, T. Kurokawa, H. Uenohara, H. lwamura

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引用次数: 1

摘要

介绍了一种具有亚波导注入光的新型InGaAs/InP MQW双稳激光二极管。灵敏度对输入光波长(3db带宽的28 nm)的依赖性非常小，输入与输出(超过30 dB)的隔离度很高。

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Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region

A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output ( over 30 dB) are observed.

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13th IEEE International Semiconductor Laser Conference

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