C/sub 2/H/sub 6//H/sub 2/O/sub 2/反应离子刻蚀制备1.48 /spl μ m lnGaAsP/InP p衬底埋置异质结构激光二极管

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763570

H. Sugimoto, T. Isu, H. Tada, T. Miura, T. Shiba, T. Kimura, A. Takemoto

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引用次数: 2

摘要

采用C/sub 2/H/sub 6//H/sub 2//O/sub 2/反应离子刻蚀技术，实现了工业生产的PPlBH激光二极管的表面刻蚀足够光滑，侧面刻蚀很小。没有观察到激光特性的退化。

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Application of reactive ion etching using C/sub 2/H/sub 6//H/sub 2/O/sub 2/ to fabricate a 1.48 /spl mu/m lnGaAsP/InP p-substrate buried-heterostructure laser diode

Reactive ion etching using C/sub 2/H/sub 6//H/sub 2//O/sub 2/ realized sufficiently smooth etched surface and little side-etching for the fabrication of ridge mesa structures of the commercially produced PPlBH laser diodes. No degradation of the laser characteristics was observed.

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13th IEEE International Semiconductor Laser Conference

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