Unique top-driven lasers having record-high performance by Self-Aligned Si-Zn Diffusion

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763653

W. Zou, K. Law, J. Merz

引用次数: 0

Abstract

Planar top-driven lasers with vertical carrier injection have been fabricated by self-aligned Si-Zn diffusion. The lasers have threshold current as low as 2.0 mA and light output as high as 19 mW per facet at RT CW operation.

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独特的顶部驱动激光器具有创纪录的高性能自对准硅锌扩散

采用自对准Si-Zn扩散技术制备了垂直载流子注入平面顶驱激光器。该激光器的阈值电流低至2.0 mA，在RT连续波工作时，每面光输出高达19 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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