High temperature (74/spl deg/c) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier

Abstract

The InGaAlP semiconductor system has been employed to develop highly efficient visible light emitting lasers in the wavelength range 6501x11 to 690nm. Hawever, the advantages of even shorter wavelengths, in the areas of optical recording and printing media, has led to investigations into such. structures as the multiple quantum well (MQW). The major aim being tcl produce a laser emitting at the same wavelength as the HeNe gas laser, i.e. 633nm. However, most of the lasers so far developed have had very lmr maximum operating temperatures with large threshold currents, due to the increasing problem of carrier overflm from the active to cladding regions of the lasers. Due to this, the maximum operating temperatures of these devices have been limited to under 50'C (1, 2 ) . Although, some progress has been made in reducing the threshold currents ( 3 ) , the problem of poor temperature characteristics remains.