{"title":"独特的顶部驱动激光器具有创纪录的高性能自对准硅锌扩散","authors":"W. Zou, K. Law, J. Merz","doi":"10.1109/ISLC.1992.763653","DOIUrl":null,"url":null,"abstract":"Planar top-driven lasers with vertical carrier injection have been fabricated by self-aligned Si-Zn diffusion. The lasers have threshold current as low as 2.0 mA and light output as high as 19 mW per facet at RT CW operation.","PeriodicalId":207712,"journal":{"name":"13th IEEE International Semiconductor Laser Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Unique top-driven lasers having record-high performance by Self-Aligned Si-Zn Diffusion\",\"authors\":\"W. Zou, K. Law, J. Merz\",\"doi\":\"10.1109/ISLC.1992.763653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Planar top-driven lasers with vertical carrier injection have been fabricated by self-aligned Si-Zn diffusion. The lasers have threshold current as low as 2.0 mA and light output as high as 19 mW per facet at RT CW operation.\",\"PeriodicalId\":207712,\"journal\":{\"name\":\"13th IEEE International Semiconductor Laser Conference\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1992.763653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1992.763653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Unique top-driven lasers having record-high performance by Self-Aligned Si-Zn Diffusion
Planar top-driven lasers with vertical carrier injection have been fabricated by self-aligned Si-Zn diffusion. The lasers have threshold current as low as 2.0 mA and light output as high as 19 mW per facet at RT CW operation.
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