Gain-coupled long wavelength InGaAsP/InP distributed feedback lasers with quantum well gratings grown by chemical beam epitaxy

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763549

W. Tsang, F. Choa, M. Wu, Y. Chen, R. Logan, T. Tanbun-ek, S. Chu, A. Sergent, P. Magi, K. Reichmann, C. Burrus

引用次数: 1

Abstract

We report a gain-coupled DFB laser grown by chemical beam epitaxy with a quantum well loss grating structure. Device performances with some preliminary system experiment results are included.

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化学束外延生长具有量子阱光栅的增益耦合长波InGaAsP/InP分布反馈激光器

本文报道了一种具有量子阱损耗光栅结构的化学光束外延生长的增益耦合DFB激光器。给出了器件性能和初步的系统实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th IEEE International Semiconductor Laser Conference

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