半导体环形激光器的极低阈值电流操作

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763574

T. Krauss, P.J.R. Layboum

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引用次数: 14

摘要

在GaAs/AlGaAs中制备了阈值电流低至12.5mA的半导体环形激光器。计算出的弯曲损失为3dB/360/spl度/，与半径在30p/spl mu/和145/spl mu/m之间无关。L-1曲线的扭结可以用温度引起的模态位置的移动来解释。

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Very low threshold current operation of semiconductor ring lasers

Semiconductor ring lasers with a threshold current as low as 12.5mA have been fabricated in GaAs/AlGaAs. The excess bending loss is calculated to 3dB/360/spl deg/ and found to be independent of the radius between 30p/spl mu/ and 145/spl mu/m. Kinks in the L-1 curve are explained by temperature-induced shifts of the mode position.

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13th IEEE International Semiconductor Laser Conference

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