InGaAs/AlGaAs应变层量子阱激光器(SL-QWLs)增益饱和系数的理论分析

13th IEEE International Semiconductor Laser Conference Pub Date : 1992-09-21 DOI:10.1109/ISLC.1992.763562

S. Seki, P. Sotirelis, K. Hess

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引用次数: 2

摘要

考虑应变对带内弛豫时间的影响，对InGaAsIAIGaAs应变层量子阱激光器的增益饱和系数c进行了理论分析。结果表明，由于子带内弛豫时间的增加，量子阱有源层的增益饱和系数随压缩应变的增加而增加。

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Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)

The gain saturation coefficient c in InGaAsIAIGaAs strained layer quantum well lasers is the oretically analyzed by taking into account the effect of strain on the intra-su&band relaxation time. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to an increase of the intra-subband relaxation time.

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13th IEEE International Semiconductor Laser Conference

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